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SPD08P06PG

Infineon
Part Number SPD08P06PG
Manufacturer Infineon
Description Power-Transistor
Published Nov 23, 2016
Detailed Description SIPMOS® Power-Transistor Features • P-Channel • Enhancement mode • Avalanche rated • dv /dt rated • 175°C operating temp...
Datasheet PDF File SPD08P06PG PDF File

SPD08P06PG
SPD08P06PG

Overview
SIPMOS® Power-Transistor Features • P-Channel • Enhancement mode • Avalanche rated • dv /dt rated • 175°C operating temperature • Pb-free lead finishing; RoHS compliant ° Qualified according to AEC Q101 SPD08P06P G Product Summary V DS R DS(on),max ID -60 V 0.
3 Ω -8.
8 A PG-TO252-3 Type Package SPD08P06PG PG-TO252-3 Tape and reel information 1000 pcs / reel Marking Lead free 08P06P Yes Packing Non dry Parameter Symbol Conditions Continuous drain current Pulsed drain current ID I D,pulse T A=25 °C T A=100 °C T A=25 °C Avalanche energy, single pulse E AS I D=8.
83 A, R GS=25 Ω Avalanche energy, periodic limited by Tjmax E AR Reverse diode dv /dt dv /dt I D=8.
83 A, V DS=48 V...


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