| Part Number | MTP5N40E |
| Manufacturer | Motorola |
| Title | TMOS POWER FET 5.0 AMPERES 400 VOLTS RDS(on) = 1.0 OHM |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP5N40E/D ™ Data Sheet TMOS E-FET.™ High Energy Power FET Designer's MTP5N40E Mo... |
| Features |
o –Drain Diode Recovery Time Comparable to Discrete Fast Recovery Diode D TMOS POWER FET 5.0 AMPERES 400 VOLTS RDS(on) = 1.0 OHM ® G S CASE 221A –06, Style 5 TO –220AB MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain –Source Voltage Drain –Gate Voltage (RGS = 1.0 MΩ) Gate –Source Volta... |
| File Size | 258.70KB |
| Datasheet |
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MTP5N40 : .
MTP5N40E : MTP5N40E Designer’s™ Data Sheet TMOS E−FET.™ High Energy Power FET N−Channel Enhancement−Mode Silicon Gate This advanced high voltage TMOS E−FET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain−to−source diode with fast recovery time. Designed for high voltage, high speed switching applications such as power supplies, PWM motor controls and other inductive loads, the avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients. • Avalanche Energy Capability Specified at Elevated Temperat.