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MTP5N40E

ON Semiconductor
Part Number MTP5N40E
Manufacturer ON Semiconductor
Description High Energy Power FET
Published Jan 18, 2016
Detailed Description MTP5N40E Designer’s™ Data Sheet TMOS E−FET.™ High Energy Power FET N−Channel Enhancement−Mode Silicon Gate This advanced...
Datasheet PDF File MTP5N40E PDF File

MTP5N40E
MTP5N40E

Overview
MTP5N40E Designer’s™ Data Sheet TMOS E−FET.
™ High Energy Power FET N−Channel Enhancement−Mode Silicon Gate This advanced high voltage TMOS E−FET is designed to withstand high energy in the avalanche mode and switch efficiently.
This new high energy device also offers a drain−to−source diode with fast recovery time.
Designed for high voltage, high speed switching applications such as power supplies, PWM motor controls and other inductive loads, the avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.
• Avalanche Energy Capability Specified at Elevated Temperature • Low Stored Gate Charge for Efficient Switching • Internal Source−to−Drain Diode Designed to Replace External Zener Transient Suppressor — Absorbs High Energy in the Avalanche Mode • Source−to−Drain Diode Recovery Time Comparable to Discrete Fast Recovery Diode http://onsemi.
com TMOS POWER FET 5.
0 AMPERES, 400 VOLTS RDS(on) = 1.
0 W TO−220AB CASE 221A−06 Style 5 D ®G S Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented.
SOA Limit curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred devices are Motorola recommended choices for future use and best overall value.
© Semiconductor Components Industries, LLC, 2006 August, 2006 − Rev.
2 1 Publication Order Number: MTP5N40E/D MTP5N40E MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Drain−Source Voltage Drain−Gate Voltage (RGS = 1.
0 MΩ) Gate−Source Voltage — Continuous Gate−Source Voltage — Non−repetitive VDSS VDGR VGS VGSM Drain Current — Continuous Drain Current — Pulsed ID IDM Total Power Dissipation @ TC = 25°C Derate above 25°C PD Operating and Storage Temperature Range TJ, Tstg UNCLAMPED DRAIN−TO−SOURCE AVALANCHE CHARACTERISTICS (TJ <...


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