| Part Number | 2SK3476 |
| Manufacturer | Toshiba Semiconductor |
| Title | N-Channel MOSFET |
| Description | 2SK3476 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3476 VHF- and UHF-band Amplifier Applications Unit: mm Output power: PO = 7... |
| Features |
Drain efficiency Power gain Low voltage output power Symbol IDSS IGSS Vth VDS (ON) Yfs Ciss Coss PO hD GP POL Test Condition VDS = 20 V, VGS = 0 V VGS = 10 V VDS = 7.2 V, ID = 2 mA VGS = 10 V, ID = 75 mA VDS = 7.2 V, IDS = 1 A VDS = 7.2 V, VGS = 0 V, f = 1 MHz VDS = 7.2 V, VGS = 0 V, f = 1 MHz VDS =...
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| File Size | 120.25KB |
| Datasheet |
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2SK3471 : 2SK3471 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV) 2SK3471 Switching Regulator and DC-DC Converter Applications · · · · Low drain-source ON resistance: RDS (ON) = 10 Ω (typ.) High forward transfer admittance: |Yfs| = 0.4 S (typ.) Low leakage current: IDSS = 100 µA (max) (VDS = 500 V) Enhancement-model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kW) Gate-source voltage Drain current Drain power dissipation Drain power dissipation (Note 2) DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD PD EAS IAR EAR Tch Tstg Rating 500 500 ±30 0.5 1.5 0.5 1.5 14.3 0.5 0.05 150 -55 to1.
2SK3472 : 2SK3472 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV) 2SK3472 Switching Regulator Applications Unit: mm • • • • Low drain-source ON resistance: RDS (ON) = 4.0 mΩ (typ.) High forward transfer admittance: |Yfs| = 0.8 S (typ.) Low leakage current: IDSS = 100 µA (max) (VDS = 450 V) Enhancement-model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Tc = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current Drain power dissipation Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range DC (Note 1) Symbol VDSS VDGR VGSS ID ID.
2SK3473 : www.DataSheet4U.com 2SK3473 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIV) 2SK3473 Switching Regulator Applications Unit: mm • • • • Low drain-source ON resistance: RDS (ON) = 1.3Ω (typ.) High forward transfer admittance: |Yfs| = 6.5S (typ.) Low leakage current: IDSS = 100 μA (VDS = 720 V) Enhancement-mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage DC Drain current (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 900 900 ±30 9 27 150 413 9 15 150 -55~150 A W mJ A mJ °C °C Unit V V V Pulse (t = 1 ms) (Note 1) Drain power dissipati.
2SK3474-01 : 2SK3474-01 Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof FUJI POWER MOSFET200303 N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Applications for Switching Foot Print Pattern Absolute Maximum Ratings at Tc=25°C ( unless otherwise specified) Unit V V A Continuous drain current A A Pulsed drain current ID(puls] V Gate-source voltage VGS A Repetitive or non-repetitive IAR *2 mJ Maximum Avalanche Energy EAS *1 kV/µs Maximum Drain-Source dV/dt dV DS /dt kV/µs Peak Diode Recovery dV/dt dV/dt *3 Max. power dissipation PD W W Operating and storage Tch °C temperature range Tstg °C *1 L=0.228mH, Vcc=48V, See to Aval.
2SK3475 : 2SK3475 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3475 VHF- and UHF-band Amplifier Applications Unit: mm Output power: PO = 630 mW (min) Gain: GP = 14.9dB (min) Drain efficiency: ηD = 45% (min) · · · Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gain-source voltage Drain current Power dissipation Channel temperature Storage temperature range Symbol VDSS VGSS ID PD (Note 1) Tch Tstg Rating 20 ±5 1 3 150 −45~150 Unit V V A W °C °C Note 1: Tc = 25°C (When mounted on a 1.6 mm glass epoxy PCB) JEDEC JEITA TOSHIBA ― SC-62 2-5K1D Marking Type name W B 1 2 3 1. Gate 2. Source 3. Drain Caution Please take care to avoid generating static electricity.
2SK3476 : The UTC 2SK3476 are intended for high frequency Power Amplifier of telecommunications equipment. ORDERING INFORMATION Ordering Number Lead Free Halogen-Free 2SK3476L-AA3-R 2SK3476G-AA3-R Note: Pin Assignment: G: Gate S: Source D: Drain Package SOT-223 Pin Assignment 123 GSD Packing Tape Reel MARKING www.unisonic.com.tw Copyright © 2018 Unisonic Technologies Co., Ltd 1 of 3 QW-R211-038.a 2SK3476 Preliminary POWER MOSFET ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 20 V Gate- Source Voltage Drain Current VGSS ±5 V ID 3 A Power Dissipation (Note 2) Junction Temperature PD 5 W TJ +150 °C.
2SK3479 : ·motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 83 A IDM Drain Current-Single Pluse 332 A PD Total Dissipation @TC=25℃ 125 W TJ Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX 1 UNIT ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL .
2SK3479 : The 2SK3479 is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER 2SK3479 2SK3479-S 2SK3479-ZJ 2SK3479-Z PACKAGE TO-220AB TO-262 TO-263 TO-220SMDNote FEATURES • Super low on-state resistance: RDS(on)1 = 11 mΩ MAX. (VGS = 10 V, ID = 42 A) RDS(on)2 = 13 mΩ MAX. (VGS = 4.5 V, ID = 42 A) • Low Ciss: Ciss = 11000 pF TYP. • Built-in gate protection diode Note TO-220SMD package is produced only in Japan. (TO-220AB) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg 1.
2SK3479 : SMD Type MOS Field Effect Transistor 2SK3479 TO-263 +0.1 1.27-0.1 MOSFET Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Features Super low on-state resistance: RDS(on)1 = 11 m RDS(on)2 = 13 m MAX. (VGS = 10 V, ID = 42 A) +0.2 8.7-0.2 MAX. (VGS = 4.5 V, ID = 42 A) Low Ciss: Ciss = 11000 pF TYP. Built-in gate protection diode +0.1 1.27-0.1 0.1max +0.1 0.81-0.1 +0.2 5.28-0.2 2.54 5.08 +0.1 -0.1 +0.2 2.54-0.2 +0.2 15.25-0.2 +0.2 2.54-0.2 +0.2 0.4-0.2 Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current Power dissipation TC=25 TA=25 Channel temperature Storage temperature * PW 10 s,Duty Cycle 1% Tch Tstg Symbol VDSS VGSS ID Idp * PD Rating 1.
2SK3479-S : ·motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 83 A IDM Drain Current-Single Pluse 332 A PD Total Dissipation @TC=25℃ 125 W TJ Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX 1 UNIT ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL .
2SK3479-Z : ·motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 83 A IDM Drain Current-Single Pluse 332 A PD Total Dissipation @TC=25℃ 125 W TJ Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX 1 UNIT ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL .
2SK3479-ZJ : ·motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 83 A IDM Drain Current-Single Pluse 332 A PD Total Dissipation @TC=25℃ 125 W TJ Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX 1 UNIT ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL .