DatasheetsPDF.com

2SK3471

Toshiba Semiconductor
Part Number 2SK3471
Manufacturer Toshiba Semiconductor
Description N-Channel MOSFET
Published Dec 16, 2005
Detailed Description 2SK3471 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV) 2SK3471 Switching Regulator and DC-DC Conve...
Datasheet PDF File 2SK3471 PDF File

2SK3471
2SK3471

Overview
2SK3471 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV) 2SK3471 Switching Regulator and DC-DC Converter Applications · · · · Low drain-source ON resistance: RDS (ON) = 10 Ω (typ.
) High forward transfer admittance: |Yfs| = 0.
4 S (typ.
) Low leakage current: IDSS = 100 µA (max) (VDS = 500 V) Enhancement-model: Vth = 2.
0 to 4.
0 V (VDS = 10 V, ID = 1 mA) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kW) Gate-source voltage Drain current Drain power dissipation Drain power dissipation (Note 2) DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD PD EAS IAR EAR Tch Tstg Rating 500 500 ±30 0.
5 1.
5 0.
5 1.
5 14.
3 0.
5 0.
05 150 -55 to150 Unit V V V A W W Pulse (Note 1) Single pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Note 4) Channel temperature Storage temperature range JEDEC mJ A mJ °C °C ― SC-62 2-5K1B JEITA TOSHIBA Weight: 0.
05 g (typ.
) Thermal Characteristics Characteristics Thermal...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)