| Part Number | 2SJ113 |
| Manufacturer | Hitachi Semiconductor |
| Title | SILICON P-CHANNEL MOS FET |
| Description | w w w a .D S ta e h U 4 t e .c m o w w w .D a S a t e e h U 4 t m o .c ... |
| Features |
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| File Size | 235.75KB |
| Datasheet |
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2SJ111 : SILICON f CHANNEL JUNCTION TYPE 2SJ111 FOR LOW NOISE AUDIO AMPLIFIER APPLICATIONS. FEATURES . Recommended for First Stages of EQ Amplifier and MC Head Amplifiers. . High lY fs l : |Yf s ]=40mS(Typ.) (VDS =-10V, VGS =0, I D SS=-5mA) . Low Noise : NF=1. OdB(Typ. (VDS =-10V, I D=-5mA, f=lkHz, Rg =100Q) . High Input Impedance : lGSS=lnA(Max. ) (Vdg=-25V) . Complementary to 2SK369 Unit in mm 51 MAX . 1.27 1.27 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Gate-Drain Voltage Gate Current Drain Power Dissipation Junction Temperature Storage Temperature Range VGDS IG PD r stg ELECTRICAL CHARACTERISTICS (Ta=25°C) CHARACTERISTIC SYMBOL Gate-Source Cut-off Current IGSS Gate.
2SJ112 : .
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2SJ115 : SILICON P CHANNEL MOS TYPE 2SJ115 AUDIO FREQUENCY POWER AMP-LI FIE R APPLICATION. FEATURES: . High Breakdown Voltage : VDS S=-160V . High Forward Transfer Admitt ance : lYf s l=2.0S (Typ.) . Complementary to 2SK405 Unit in mm 15.9MAX. 03.2±O.2 . o /o m /"«— J \ w Q o - X yS ^ — -H oo jl rf. ? i i 2.C ±a3 os IO 1-1 SO + 0.3 c5 1.0-0.2 5 j, 5.45 + Q.f i 5 4 ;=_!: 0.2 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage Drain Current Power Dissipation (Tc=25°C) Channel Temperature Storage Temperature Range SYMBOL VdSS vgss id pd Teh Tstg RATING -160 ±20 -8 100 150 -55-150 UNIT V V A W °C °C 5 +1 CO 1 r-i —' TLlL4i- \h a.
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2SJ117 : 2SJ117 Silicon P-Channel MOS FET ADE-208-1180 (Z) 1st. Edition Mar. 2001 Application High speed power switching Features • • • • High speed switching Good frequency characteristics Wide area of safe operation Suitable for switching regulator, DC-DC converter and ultrasonic power oscillators. Outline TO-220AB D 1 2 3 1. Gate 2. Drain (Flange) 3. Source G S 2SJ117 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. Value at TC = 25°C Symbol VDSS VGSS ID I D(pulse) I DR Pch* Tch Tstg 1 Ratings –400 ±20 –.
2SJ118 : www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com .
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