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2SJ117

Hitachi Semiconductor
Part Number 2SJ117
Manufacturer Hitachi Semiconductor
Description P-Channel MOSFET
Published Mar 30, 2005
Detailed Description 2SJ117 Silicon P-Channel MOS FET ADE-208-1180 (Z) 1st. Edition Mar. 2001 Application High speed power switching Featur...
Datasheet PDF File 2SJ117 PDF File

2SJ117
2SJ117

Overview
2SJ117 Silicon P-Channel MOS FET ADE-208-1180 (Z) 1st.
Edition Mar.
2001 Application High speed power switching Features • • • • High speed switching Good frequency characteristics Wide area of safe operation Suitable for switching regulator, DC-DC converter and ultrasonic power oscillators.
Outline TO-220AB D 1 2 3 1.
Gate 2.
Drain (Flange) 3.
Source G S 2SJ117 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1.
Value at TC = 25°C Symbol VDSS VGSS ID I D(pulse) I DR Pch* Tch Tstg 1 Ratings –400 ±20 –2 –4 –2 40 150 –55 to +150 Unit V V A A A W °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source leak current Symbol Min V(BR)DSS I GSS –400 — — –2.
0 — Typ — — — — 5 Max — ±1 –1 –5.
0 7 Unit V µA mA V Test conditions I D = –10 mA, VGS = 0 VGS = ±20 V, V...


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