| Part Number | PMV30UN |
| Manufacturer | NXP |
| Title | uTrenchMOS ultra low level FET |
| Description | N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PMV30UN in SOT23. 1.2 F... |
| Features |
s Surface mount package s Fast switching.
1.3 Applications
s Battery management s High-speed switches.
1.4 Quick reference data
s VDS ≤ 20 V s Ptot ≤ 1.9 W s ID ≤ 5.7 A s RDSon ≤ 36 mΩ
2. Pinning information
Table 1: Pin 1 2 3 Pinning - SOT23 simplified outline and symbol Description gate (g) sour...
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| File Size | 264.93KB |
| Datasheet |
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PMV30UN2 : N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Trench MOSFET technology • Low threshold voltage • Very fast switching • Enhanced power dissipation capability of 1000 mW 3. Applications • LED driver • Power management • Low-side load switch • Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics RDSon drain-source on-state resistance Conditions Tj = 25 °C VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s VGS = 4.5 V; ID = 4.2 A; Tj .
PMV30UN2 : N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Trench MOSFET technology • Low threshold voltage • Very fast switching • Enhanced power dissipation capability of 1000 mW 3. Applications • LED driver • Power management • Low-side load switch • Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics RDSon drain-source on-state resistance Conditions Tj = 25 °C VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s VGS = 4.5 V; ID = 4.2 A; Tj .