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PMV30UN2

nexperia
Part Number PMV30UN2
Manufacturer nexperia
Description N-channel MOSFET
Published Jul 28, 2019
Detailed Description PMV30UN2 20 V, N-channel Trench MOSFET 24 April 2014 Product data sheet 1. General description N-channel enhancement m...
Datasheet PDF File PMV30UN2 PDF File

PMV30UN2
PMV30UN2

Overview
PMV30UN2 20 V, N-channel Trench MOSFET 24 April 2014 Product data sheet 1.
General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2.
Features and benefits • Trench MOSFET technology • Low threshold voltage • Very fast switching • Enhanced power dissipation capability of 1000 mW 3.
Applications • LED driver • Power management • Low-side load switch • Switching circuits 4.
Quick reference data Table 1.
Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics RDSon drain-source on-state ...


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