2SK2595

2SK259 : ·Drain Current –ID=5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 350V(Min) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed especially for high voltage,high speed applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 350 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ 5 A Ptot Total Dissipation@TC=25℃ 125 W Tj Max. Operating Junction Temperature 200 ℃ Tstg Storage Temperature Range -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.67 ℃/.

2SK2590 : 2SK2590 Silicon N-Channel MOS FET Preliminary Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC-DC converter, Motor Control Outline TO-220AB D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK2590 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25 °C Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Ratings 200 ±20 7 28 7 50 .

2SK2590 : ·Drain Current ID= 7A@ TC=25℃ ·Drain Source Voltage- : VDSS= 200V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching Regulators ·DC-DC Converter, ·Motor Control ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 200 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 7 A ID(puls) Pulsed Drain Current 28 A Ptot Total Dissipation@TC=25℃ 50 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SK2590 isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel Mosfet.

2SK2590 : 2SK2590 Silicon N Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter, motor control Outline RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB) G 123 REJ03G1021-0300 (Previous: ADE-208-1365A) Rev.3.00 Sep 07, 2005 D 1. Gate 2. Drain (Flange) 3. Source S Rev.3.00 Sep 07, 2005 page 1 of 6 2SK2590 Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty .

2SK2593 : Silicon Junction FETs (Small Signal) 2SK2593 Silicon N-Channel Junction FET For low-frequency amplification For switching 0.4 unit: mm 1.6±0.15 0.8±0.1 0.4 q Low noies, high gain q High gate to drain voltage VGDO q Mini-type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing. 1.6±0.1 1.0±0.1 0.5 1 0.5 3 2 0.45±0.1 0.3 0.75±0.15 s Absolute Maximum Ratings (Ta = 25°C) Parameter Drain to Source voltage Gate to Drain voltage Gate to Source voltage Drain current Gate current Allowable power dissipation Junction temperature Storage temperature Symbol VDSX VGDO VGSO ID IG PD Tj Tstg Ratings 55 −55 −55 ±30 10 125 125 −55 to +125 Unit V V V.

2SK2595 : www.DataSheet4U.com 2SK2595 Silicon N-Channel MOS FET UHF Power Amplifier 1st. Edition Features • High power output, High gain, High efficiency PG = 7.8dB, Pout = 37.3dBm, ηD = 50 %min. (f = 836.5MHz) • Compact package capable of surface mounting Outline This Device is sensitive to Elector Static Discharge. An Adequate handling procedure is requested. 2SK2595 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C Symbol VDSS VGSS ID I D(pulse)* Pch* Tch Tstg 2 1 Ratings 17 ±10 1.1 5 20 150 –45 to +150.

2SK2596 : www.DataSheet4U.com 2SK2596 Silicon N-Channel MOS FET UHF Power Amplifier REJ03G0207-0300 (Previous ADE-208-1367(Z)) Rev.3.00 Feb.14.2005 Features • High power output, High gain, High efficiency PG = 12.2 dB, Pout = 30.2 dBm, ηD = 45%min. (f = 836.5 MHz) • Compact package capable of surface mounting Outline PLZZ0004CA-A (Previous code : UPAK) D 2 3 G 1 1. Gate 2. Source 3. Drain 4. Source 4 S Note: Marking is “BX“. This Device is sensitive to Electro Static Discharge. An Adequate handling procedure is requested. Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Channel dissipation Channel temperature Storage tempe.

2SK2597 : PRELIMINARY DATA SHEET SILICON POWER MOS FIELD EFFECT TRANSISTOR 2SK2597 N-CHANNEL SILICON POWER MOSFET FOR BASE STATION OF 900 MHz BAND CELLULAR PHONE POWER AMPLIFICATION FEATURES • High output, high gain PO = 100 W, GL = 13 dB (TYP.) (f = 900 MHz) PO = 90 W, GL = 12 dB (TYP.) (f = 960 MHz) • Low intermodulation distortion • Covers all base station frequencies such as 800-MHz PDC and GSM • High-reliability gold electrodes • Hermetic sealed package • Internal matching circuit • Push-pull structure PACKAGE DRAWING (Unit: mm) 45˚ G1 S G2 45˚ φ 3.3±0.3 11.4±0.3 19.4±0.4 D1 D2 1.4 3.2±0.2 ±0.3 3.2±0.2 13.5±0.3 28.0±0.3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Parameter Drain-source voltage .

2SK2598 : 2SK2598 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK2598 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 0.18 Ω (typ.) z High forward transfer admittance : |Yfs| = 13 S (typ.) z Low leakage current : IDSS = 100 μA (max) (VDS = 250 V) z Enhancement mode : Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Pulse (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current R.

2SK2599 : 2SK2599 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK2599 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 2.9 Ω (typ.) z High forward transfer admittance : |Yfs| = 1.7 S (typ.) z Low leakage current : IDSS = 100 μA (max) (VDS = 500 V) z Enhancement mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage DC (Note 1) Drain current Pulse (t = 1 ms) (Note 1) Pulse (t = 100 μs) (Note 1) Drain power dissipation Single pulse avalanche energy (Note .