| Part Number | 2STW4468 |
| Manufacturer | ST Microelectronics |
| Title | High Power NPN Epitaxial Planar Bipolar Transistor |
| Description | The device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows ... |
| Features |
■ ■ ■ ■ ■ ■ High breakdown voltage VCEO=140V Complementary to 2STW1695 Fast-switching speed Typical ft =20MHz Fully characterized at 125 oC In compliance with the 2002/93/EC European Directive TO-247 3 2 1 Applications ■ Audio power amplifier Description The device is a NPN transistor manufactur... |
| File Size | 213.91KB |
| Datasheet |
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2STW4466 : The device is a NPN transistor manufactured in low voltage planar technology using base island layout. The resulting transistor shows good gain linearity coupled with low VCE(sat) behaviour. Recommended for 40 W to 70 W high fidelity audio frequency amplifier output stage. Figure 1. Internal schematic diagram Table 1. Device summary Marking 2STW4466 Package TO-247 Packaging Tube Order code 2STW4466 September 2008 Rev 2 1/9 www.st.com 9 Electrical ratings 2STW4466 1 Electrical ratings Table 2. Symbol VCBO VCEO VEBO Absolute maximum rating Parameter Collector-base voltage (IE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0) Collector current Collector peak curre.