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2STW4466

STMicroelectronics
Part Number 2STW4466
Manufacturer STMicroelectronics
Description High power NPN epitaxial planar bipolar transistor
Published Dec 8, 2008
Detailed Description 2STW4466 High power NPN epitaxial planar bipolar transistor Features ■ High breakdown voltage VCEO = www.DataSheet4U.com...
Datasheet PDF File 2STW4466 PDF File

2STW4466
2STW4466


Overview
2STW4466 High power NPN epitaxial planar bipolar transistor Features ■ High breakdown voltage VCEO = www.
DataSheet4U.
com ■ Complementary to 2STW1693 ■ ■ 80 V Typical ft = 20 MHz Fully characterized at 125 oC Applications ■ 3 2 1 Audio power amplifier TO-247 Description The device is a NPN transistor manufactured in low voltage planar technology using base island layout.
The resulting transistor shows good gain linearity coupled with low VCE(sat) behaviour.
Recommended for 40 W to 70 W high fidelity audio frequency amplifier output stage.
Figure 1.
Internal schematic diagram Table 1.
Device summary Marking 2STW4466 Package TO-247 Packaging Tube Order code 2STW4466 September 2008 Re...



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