BUV23

BUV20 : MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BUV20/D SWITCHMODE Series NPN Silicon Power Transistor . . . designed for high speed, high current, high power applications. • High DC current gain: hFE min = 20 at IC = 25 A hFE min = 10 at IC = 50 A • Low VCE(sat): VCE(sat) max. = 0.6 V at IC = 25 A VCE(sat) max. = 1.2 V at IC = 50 A • Very fast switching times: TF = 0.25 µs at IC = 50 A BUV20 50 AMPERES NPN SILICON POWER METAL TRANSISTOR 125 VOLTS 250 WATTS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ.

BUV20 : BUV20 SWITCHMODEt Series NPN Silicon Power Transistor SWITCHMODE series NPN silicon power transistors are designed for high speed, high current, high power applications. • High DC current gain: hFE min = 20 at IC = 25 A = 10 at IC = 50 A • Low VCE(sat): VCE(sat) max. = 0.6 V at IC = 25 A = 0.9 V at IC = 50 A • Very fast switching times: TF = 0.25 μs at IC = 50 A ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMAXIMUM RATINGS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector−Emititer Voltage Collector−Base Voltage ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter−Base Voltage ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector−Emitter Voltage ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VBE = −1.5 V) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector−Emitter voltage ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ.

BUV20 : The BUV20 is silicon Multiepitaxial Planar NPN transistor mounted in jedec TO-3 metal case. It is intended for use in switching and linear applications in military and industrial equipment. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CER V CEX V CEO V EBO IC I CM IB P tot T stg Tj Parameter Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (R BE = 100 Ω ) Collector-Emitter Voltage (V BE = -1.5V) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current Base Current Total Power Dissipation at T case ≤ 25 o C Storage Temperature Junction Temperature Value 160 150 160 125 7 50 60 10 250 -65 to 200 200 Unit V V V.

BUV20 : BUV20 MECHANICAL DATA Dimensions in mm(inches) 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) NPN MULTI - EPITAXIAL POWER TRANSISTOR 38.61 (1.52) 39.12 (1.54) 0.97 (0.060) 1.10 (0.043) 29.9 (1.177) 30.4 (1.197) 16.64 (0.655) 17.15 (0.675) 22.23 (0.875) max. FEATURES • HIGH CURRENT • FAST SWITCHING • HIGH RELIABILITY 1 2 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) APPLICATIONS TO–3 PIN 1 — Base PIN 2 — Emitter Case is Collector. • Industrial Equipment ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VCBO VCER VCEX VCEO VEBO IC ICM IB Ptot Tstg, Tj Collector – Base Voltage (IE = 0) Collector –.

BUV20 : ·Low Collector Saturation Voltage- : VCE(sat)= 0.6V(Max.) @IC= 25A ·High DC Current Gain- : hFE= 20(Min.)@ IC= 25A ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high speed, high current, high power applications. Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous ICM Collector Current-Peak IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature Tstg Storage Temperature Range VALUE UNIT 160 V 125 V 7 V 50 A 60 A 10 A 250 W .

BUV21 : MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BUV21/D BUV21 SWITCHMODE Series NPN Silicon Power Transistor . . . designed for high speed, high current, high power applications. • High DC current gain: hFE min. = 20 at IC = 12 A • Low VCE(sat), VCE(sat) max. = 0.6 V at IC = 8 A Very fast switching times: TF max. = 0.4 µs at IC = 25 A 40 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS 250 WATTS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ.

BUV21 : BUV21 SWITCHMODEt Series NPN Silicon Power Transistor This device is designed for high speed, high current, high power applications. Features • High DC Current Gain: hFE min = 20 at IC = 12 A • Low VCE(sat), VCE(sat) max = 0.6 V at IC = 8 A • Very Fast Switching Times: TF max = 0.4 ms at IC = 25 A • These are Pb−Free Devices* MAXIMUM RATINGS Rating Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector−Emitter Voltage (VBE = −1.5 V) Collector−Emitter Voltage (RBE = 100 W) Collector−Current − Continuous − Peak (PW v 10 ms) Base−Current Continuous Total Device Dissipation @ TC = 25_C Operating and Storage Junction Temperature Range Symbol VCEO(SUS) VCBO VEBO VCEX VC.

BUV21 : ·With TO-3 package ·High DC current gain@IC=12A ·Fast switching times ·Low collector saturation voltage APPLICATIONS ·Designed for high current,high speed and high power applications. PINNING(see fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings (Tc=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 250 200 7 40 50 8 150 -65~200 -65~200 UNIT V V V A A A W THERMAL CHARA.

BUV21 : BUV20,BUV21,BUV22,BUV23,BUV24 NPN Silicon Low Frequency High Power Switching Transistor Features: 1. Heavy working current.Good temperature stability.Excellent thermal fatigue capability. 2. Good Switching Characteristic. 3. Implementation of standards: GJB33 A-97, QZJ840611A, QZJ840611 4. Use for Low-speed switch,low frequency power amplify,power adjustment. 5. Quality Class: JP, JT, JCT, GS, G, G+ TECHNICAL DATA: (Ta = 25°C ) Parameter name Total Dissipation (Tc=25°C) Symbols Unit Ptot W BUV20 BUV21 Specifications BUV22 250 BUV23 BUV24 Max. Collector Current ICM A 50 40 40 30 20 Junction Temperature Tjm °C 175 Collector-Base Breakdown V(BR)CBO V Voltage ≥160 ≥250 ≥3.

BUV21 : BUV21 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 29.9 (1.177) 30.4 (1.197) 16.64 (0.655) 17.15 (0.675) 1.47 (0.058) 1.60 (0.063) 22.23 (0.875) max. 12 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) 1 – Base TO3 (TO204AE) PINOUTS 2 – Emitter Case - Collector Parameter VCEO* IC(CONT) hFE ft PD Test Conditions @ 2/12 (VCE / IC) * Maximum Working Voltage Min. 20 Typ. 8M Max. 200 40 250 Units V A Hz W This is a shortform datasheet. For a full datasheet please contact sales@semelab.co.uk. Semelab .

BUV21G : BUV21 SWITCHMODEt Series NPN Silicon Power Transistor This device is designed for high speed, high current, high power applications. Features • High DC Current Gain: hFE min = 20 at IC = 12 A • Low VCE(sat), VCE(sat) max = 0.6 V at IC = 8 A • Very Fast Switching Times: TF max = 0.4 ms at IC = 25 A • These are Pb−Free Devices* MAXIMUM RATINGS Rating Symbol Value Collector−Emitter Voltage VCEO(SUS) 200 Collector−Base Voltage VCBO 250 Emitter−Base Voltage VEBO 7 Collector−Emitter Voltage (VBE = −1.5 V) VCEX 250 Collector−Emitter Voltage (RBE = 100 W) VCER 240 Collector−Current − Continuous IC 40 − Peak (PW v 10 ms) ICM 50 Base−Current Continuous IB 8 Total Device D.

BUV22 : MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BUV22/D BUV22 SWITCHMODE Series NPN Silicon Power Transistor . . . designed for high current, high speed, high power applications. • High DC current gain: HFE min. = 20 at IC = 10 A • Low VCE(sat): VCE(sat) max. = 1.0 V at IC = 10 A • Very fast switching times: TF max. = 0.35 µs at IC = 20 A 40 AMPERES NPN SILICON POWER METAL TRANSISTOR 250 VOLTS 250 WATTS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ.

BUV22 : BUV22 SWITCHMODEt Series NPN Silicon Power Transistor This device is designed for high speed, high current, high power applications. Features http://onsemi.com • High DC Current Gain: • Low VCE(sat), VCE(sat) hFE min = 20 at IC = 10 A max = 1.0 V at IC = 10 A TF max = 0.35 ms at IC = 20 A 40 AMPERES NPN SILICON POWER METAL TRANSISTOR 250 VOLTS − 250 WATTS • Very Fast Switching Times: • Pb−Free Package is Available* MAXIMUM RATINGS Rating Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage www.DataSheet4U.com Symbol VCEO(SUS) VCBO VEBO VCEX VCER IC ICM IB PD TJ, Tstg Value 250 300 7 300 290 40 50 8 250 −65 to 200 Unit Vdc Vdc Vdc Vdc Vdc Adc Apk Adc W _C BUV22G AYWW M.

BUV22 : BUV20,BUV21,BUV22,BUV23,BUV24 NPN Silicon Low Frequency High Power Switching Transistor Features: 1. Heavy working current.Good temperature stability.Excellent thermal fatigue capability. 2. Good Switching Characteristic. 3. Implementation of standards: GJB33 A-97, QZJ840611A, QZJ840611 4. Use for Low-speed switch,low frequency power amplify,power adjustment. 5. Quality Class: JP, JT, JCT, GS, G, G+ TECHNICAL DATA: (Ta = 25°C ) Parameter name Total Dissipation (Tc=25°C) Symbols Unit Ptot W BUV20 BUV21 Specifications BUV22 250 BUV23 BUV24 Max. Collector Current ICM A 50 40 40 30 20 Junction Temperature Tjm °C 175 Collector-Base Breakdown V(BR)CBO V Voltage ≥160 ≥250 ≥3.

BUV22 : BUV22 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 29.9 (1.177) 30.4 (1.197) 16.64 (0.655) 17.15 (0.675) 1.47 (0.058) 1.60 (0.063) 22.23 (0.875) max. 12 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) 1 – Base TO3 (TO204AE) PINOUTS 2 – Emitter Case - Collector Parameter VCEO* IC(CONT) hFE ft PD Test Conditions @ 4/10 (VCE / IC) * Maximum Working Voltage Min. 20 Typ. 8M Max. 250 40 250 Units V A Hz W This is a shortform datasheet. For a full datasheet please contact sales@semelab.co.uk. Semelab .

BUV22 : ·Low Collector Saturation Voltage- : VCE(sat)= 1.0V (Max.) @IC= 10A ·High Switching Speed ·High DC Current Gain- : hFE= 20(Min.) @IC= 10A APPLICATIONS ·Designed for high current, high speed, high power applications. Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER VCBO VCER VCEX VCEO VEBO Collector-Base Voltage Collector-Emitter Voltage RBE= 100Ω Collector-Emitter Voltage VBE= -1.5V Collector-Emitter Voltage Emitter-Base Voltage IC Collector Current-Continuous ICM Collector Current-Peak IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature Tstg Storage Temperature Range VALUE UNIT 300 V 290 V 300 V 250 V 7V 40 A 50 A 8A 250 W 200 ℃ -65~200 ℃.

BUV23 : .