DatasheetsPDF.com

BUV21

Part Number	BUV21
Manufacturer	ON Semiconductor
Description	NPN Silicon Power Transistor
Published	Mar 23, 2005
Detailed Description	BUV21 SWITCHMODEt Series NPN Silicon Power Transistor This device is designed for high speed, high current, high power ...
Datasheet	BUV21 PDF File

Overview

BUV21 SWITCHMODEt Series NPN Silicon Power Transistor This device is designed for high speed, high current, high power applications.
Features • High DC Current Gain: hFE min = 20 at IC = 12 A • Low VCE(sat), VCE(sat) max = 0.
6 V at IC = 8 A • Very Fast Switching Times: TF max = 0.
4 ms at IC = 25 A • These are Pb−Free Devices* MAXIMUM RATINGS Rating Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector−Emitter Voltage (VBE = −1.
5 V) Collector−Emitter Voltage (RBE = 100 W) Collector−Current − Continuous − Peak (PW v 10 ms) Base−Current Continuous Total Device Dissipation @ TC = 25_C Operating and Storage Junction Temperature Range Symbol VCEO(SUS) VCBO VEBO VCEX VC...

Similar Datasheet

BUV10 Silicon NPN Power Transistor - Inchange Semiconductor
BUV10N Bipolar NPN Device in a Hermetically sealed TO3 Metal Package - Seme LAB
BUV11 20 AMPERES NPN SILICON POWER METAL TRANSISTOR - Motorola Inc
BUV11 SITCHMODE Series NPN Silicon Power Transistor - ON Semiconductor
BUV12 Bipolar NPN Device - Seme LAB
BUV12 NPN Transistor - INCHANGE
BUV18 (BUV18 / BUV19) NPN High Current Switching Transistors - ST Microelectronics
BUV18 Bipolar NPN Device in a Hermetically sealed TO3 Metal Package - Seme LAB
BUV18 Silicon NPN Power Transistor - Inchange Semiconductor
BUV18X Bipolar NPN Device in a Hermetically sealed TO3 Metal Package - Seme LAB

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)