CXT5551

CXT5551 : The CENTRAL SEMICONDUCTOR CXT5551 type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage amplifier applications. SOT-89 CASE MAXIMUM RATINGS (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC PD TJ,Tstg ΘJA UNITS V V V mA W °C °C/W 180 160 6.0 600 1.2 -65 to +150 104 ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) SYMBOL ICBO ICBO IEBO BVCBO BVCEO BVEBO VCE(SAT) VCE(SAT) VBE(SAT) VBE(SAT) hFE hFE hFE fT Cob hfe NF TEST CONDITIONS VCB=12.

CXT5551 : NPN Silicon Epitaxial Planar Transistor FEATURES z Switching and amplification in high voltage. z Low current(max. 600mA) z High voltage (max. 180V) Pb Lead-free Production specification CXT5551 APPLICATIONS z High voltage amplifier application. ORDERING INFORMATION Type No. Marking CXT5551 1G6 SOT-89 Package Code SOT-89 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO VCEO VEBO IC PC RθJA Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Thermal resistance 180 160 6 600 0.625 250 Tj,Tstg Junction and Storage Temperature -65 to +150 Units V V V mA W ℃/W ℃ E059 Rev.A ww.

CXT5551 : Plastic-Encapsulate Transistors FEATURES • Switching and amplification in high voltage Applications such as telephony • Low current(max. 600mA) • High voltage(max.180v) Marking: 5551 Maximum Ratings (Ta=25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power dissipation Junction Temperature Storage Temperature unless otherwise noted) Symbol Value VCBO 180 VCEO 160 VEBO 6 IC 600 PC 500 TJ 150 Tstg -55to +150 Unit V V V mA mW ELECTRICAL CHARACTERISTICS ( @ Ta=25 unless otherwise specified) Parameter Symbol Test conditions Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base b.

CXT5551 : SMD Type Transistors Surface Mount NPN Silicon Transistor KXT5551 (CXT5551) SOT-89 4.50 +0.1 -0.1 Unit: mm 1.50 +0.1 -0.1 +0.1 1.80-0.1 Features +0.1 2.50-0.1 +0.1 0.48-0.1 +0.1 0.53-0.1 Low voltage (max. 150 V). +0.1 0.80-0.1 +0.1 0.44-0.1 2.60 +0.1 -0.1 +0.1 4.00-0.1 High current (max. 500mA). +0.1 3.00-0.1 0.40 1. Base 2. Collector 3. Emiitter Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) power dissipation thermal resistance Junction-to-ambient Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PD R JA Rating 180 160 6 600 1.2 104 150 -65 to +150 Unit V V V mA W /W Tj T.

CXT5551E : The CENTRAL SEMICONDUCTOR CXT5551E is an NPN Silicon Transistor, packaged in an SOT-89 case, designed for general purpose amplifier applications requiring high breakdown voltage. MARKING: FULL PART NUMBER SOT-89 CASE APPLICATIONS: • General purpose switching and amplification • Telephone applications FEATURES: • High Collector Breakdown Voltage: 250V • Low Leakage Current: 50nA MAX • Low Saturation Voltage: 100mV MAX @ 50mA • Complementary Device: CXT5401E • SOT-89 Surface Mount Package MAXIMUM RATINGS: (TA=25°C) ♦ Collector-Base Voltage ♦ Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resis.

CXT5551HC : The CENTRAL SEMICONDUCTOR CXT5551HC type is an high current NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage and high current amplifier applications. MARKING: FULL PART NUMBER MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC PD TJ, Tstg ΘJA 180 160 6.0 1.0 1.2 -65 to +150 104 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP ICBO ICBO IEBO BVCBO BVCEO BVEBO VCE(SAT) VCE(SAT) VB.