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CXT5551

Part Number	CXT5551
Manufacturer	GME
Description	NPN Silicon Epitaxial Planar Transistor
Published	Jan 8, 2018
Detailed Description	NPN Silicon Epitaxial Planar Transistor FEATURES z Switching and amplification in high voltage. z Low current(max. 600m...
Datasheet	CXT5551 PDF File

Overview

NPN Silicon Epitaxial Planar Transistor FEATURES z Switching and amplification in high voltage.
z Low current(max.
600mA) z High voltage (max.
180V) Pb Lead-free Production specification CXT5551 APPLICATIONS z High voltage amplifier application.
ORDERING INFORMATION Type No.
Marking CXT5551 1G6 SOT-89 Package Code SOT-89 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO VCEO VEBO IC PC RθJA Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Thermal resistance 180 160 6 600 0.
625 250 Tj,Tstg Junction and Storage Temperature -65 to +150 Units V V V mA W ℃/W ℃ E059 Rev.
A www.
gmicroelec.
com 1 Production specification NPN Silicon Epitaxial Planar Transistor CXT5551 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0 180 V Collector-emitter...

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