1N829

1N821 : 1N821-1N829A High-reliability discrete products and engineering services since 1977 TEMPERATURE COMPENSATED ZENER REFERENCE DIODE FEATURES  Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.  Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS Operating and storage temperature range DC power dissipation Solder temperatures -65°C to +175°C 500mW @ TL = 25°C and maximum current lZM OF 70mA. For optimum voltage-temperature stability, lZ = 7.5mA (less than 50 mW in dissipated power) 260°C for 10 s (max) ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Part n.

1N821 : MOTOROLA SEMICONDUCTOR TECHNICAL DATA Temperature-Compensated Zener Reference Diodes Temperature-compensated zener reference diodes utilizing a single chip oxide passivated junction for long-term voltage stability. A rugged, glass-enclosed, hermetically sealed structure. Mechanical Characteristics: CASE: Hermetically sealed, all-glass DIMENSIONS: See outline drawing. FINISH: All external surfaces are corrosion resistant and leads are readily solderable. POLARITY: Cathode indicated by polarity band. WEIGHT: 0.2 Gram (approx.) MOUNTING POSITION: Any Maximum Ratings Junction Temperature: – 55 to +175°C Storage Temperature: – 65 to +175°C DC Power Dissipation: 400 mW @ TA = 50°C WAFER FAB LOCA.

1N821 : Voltage reference diode in a hermetically-sealed SOD68 (DO-34) glass package. a MAM216 APPLICATION • Voltage reference sources in measuring instruments such as digital voltmeters. Fig.1 Simplified outline (SOD68; DO-34) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL IZ Ptot Tstg Tj Tamb PARAMETER working current total power dissipation storage temperature junction temperature operating ambient temperature Tamb = 50 °C CONDITIONS MIN. − − −65 − −55 MAX. 50 400 +200 200 +100 UNIT mA mW °C °C °C 1996 Mar 20 2 Philips Semiconductors Product specification Voltage reference diodes ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise sp.

1N821 : • 1N821-1,1N823-1,1N825-1,1N827-1 AND 1N829-1 AVAILABLE IN JAN, JANTX, JANTXV AND JANS PER MIL-PRF-19500/159 • TEMPERATURE COMPENSATED ZENER REFERENCE DIODES • METALLURGICALLY BONDED • DOUBLE PLUG CONSTRUCTION 1N821 thru 1N829A and 1N821-1 thru 1N829-1 MAXIMUM RATINGS Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C DC Power Dissipation: 500mW @ +50°C Power Derating: 4 mW / °C above +50°C REVERSE LEAKAGE CURRENT lR = 2µA @ 25°C & VR = 3 Vdc ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified. JEDEC TYPE NUMBER ZENER VOLTAGE vz @ I ZT ZENER TEST CURRENT I ZT MAXIMUM ZENER IMPEDANCE (Note 1) Z ZT VOLTAGE TEMPERATURE STABILITY ∆V ZT -55° to +100° (N.

1N821 : Voltage reference diode in a hermetically-sealed SOD68 (DO-34) glass package. a MAM216 APPLICATION • Voltage reference sources in measuring instruments such as digital voltmeters. Fig.1 Simplified outline (SOD68; DO-34) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL IZ Ptot Tstg Tj Tamb PARAMETER working current total power dissipation storage temperature junction temperature operating ambient temperature Tamb = 50 °C CONDITIONS MIN. − − −65 − −55 MAX. 50 400 +200 200 +100 UNIT mA mW °C °C °C 1996 Mar 20 2 Philips Semiconductors Product specification Voltage reference diodes ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise sp.

1N821 : 1N821 thru 1N829A Temperature Compensated Zener Diodes Features ■ Temperature compensated zener diodes ■ Metallurgically bonded ■ Double plug construction Maximum Ratings (TA = 25°C unless otherwise noted) Parameter Operating Temperature Storage Temperature DC Power Dissipation Power Derating Symbol TJ TSTG PTOT Conditions Ratings TA = 50°C TA 50°C -65 to +175 -65 to +175 500 4.0 Package: DO-35 Unit °C °C mW mW/°C Electrical Characteristics (TA=25°C unless otherwise noted) MPN Zener Voltage VZ@ IZT Zener Test Current IZT Maximum Zener Impedance (Note 1) ZZT Voltage Temperature Stability ∆VZT -55°C to +100°C (Note 2) 1N821 1N821A 1N822 † 1N823 1N823A 1N824 † 1N825 1N825A 1N826 .

1N821 : • 1N821-1,1N823-1,1N825-1,1N827-1 AND 1N829-1 AVAILABLE IN JAN, JANTX, JANTXV AND JANS PER MIL-PRF-19500/159 • TEMPERATURE COMPENSATED ZENER REFERENCE DIODES • METALLURGICALLY BONDED • DOUBLE PLUG CONSTRUCTION 1N821 thru 1N829A and 1N821-1 thru 1N829-1 MAXIMUM RATINGS Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C DC Power Dissipation: 500mW @ +50°C Power Derating: 4 mW / °C above +50°C REVERSE LEAKAGE CURRENT lR = 2µA @ 25°C & VR = 3 Vdc ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise speci½ed. JEDEC TYPE NUMBER 1N821 1N821A 1N822 † 1N823 1N823A 1N824 † 1N825 1N825A 1N826 1N827 1N827A 1N828 1N829 1N829A ZENER VOLTAGE vz @ I ZT VOLTS 5.9—6.5 5.9—6.5 5.9—.

1N821 : Temperature Compensated Zener Reference Diode Series 1N821 thru 1N829A & 1N821-1 thru 1N829-1 Features • 1N821-1, 1N823-1, 1N825-1, 1N827-1 and 1N829-1 available in JAN, JANTX, JANTXV, JANS • Metallurgically Bonded, Double Plug Construction Maximum Ratings Operating & Storage Temperature: -65°C to +175°C DC Power Dissipation: 500mW @ +50°C Power Derating: 4 mW / °C above +50°C REVERSE LEAKAGE CURRENT lR = 2 μA @ 25°C & VR = 3 Vdc Electrical Specifications @ +25 ºC (Unless Otherwise Specified) JEDEC TYPE Number (Note1) 1N821 1N821A 1N822 † 1N823 1N823A 1N824 † 1N825 1N825A 1N826 1N827 1N827A 1N828 1N829 1N829A Normal Zener Voltage Vz @ IZT Volts 5.9—6.5 5.9—6.5 5.9—6.5 5.9—6.5 5.9—6.5 5.9—.

1N821-1 : The popular 1N821-1 – 1N829A-1 series of temperature compensated reference diodes provides both 6.2 V and 6.55 V nominal voltages and temperature coefficients as low as 0.0005 %/oC at a Zener test current of 7.5 mA. These DO-35 packaged (glass, axial leaded) reference diodes are optionally available as RoHS compliant. This type of bonded Zener package construction is also available in JAN, JANTX, JANTXV and JANS military qualifications where the RoHS compliant “e3” is not an option. Microsemi also offers other Zener Reference Diode products for a variety of voltages up to 200 V. *Qualified Levels: JAN, JANTX, JANTXV and JANS (available on some part numbers) Important: For the latest inform.

1N821A : Voltage reference diode in a hermetically-sealed SOD68 (DO-34) glass package. a MAM216 APPLICATION • Voltage reference sources in measuring instruments such as digital voltmeters. Fig.1 Simplified outline (SOD68; DO-34) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL IZ Ptot Tstg Tj Tamb PARAMETER working current total power dissipation storage temperature junction temperature operating ambient temperature Tamb = 50 °C CONDITIONS MIN. − − −65 − −55 MAX. 50 400 +200 200 +100 UNIT mA mW °C °C °C 1996 Mar 20 2 Philips Semiconductors Product specification Voltage reference diodes ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise sp.

1N821A : MOTOROLA SEMICONDUCTOR TECHNICAL DATA Temperature-Compensated Zener Reference Diodes Temperature-compensated zener reference diodes utilizing a single chip oxide passivated junction for long-term voltage stability. A rugged, glass-enclosed, hermetically sealed structure. Mechanical Characteristics: CASE: Hermetically sealed, all-glass DIMENSIONS: See outline drawing. FINISH: All external surfaces are corrosion resistant and leads are readily solderable. POLARITY: Cathode indicated by polarity band. WEIGHT: 0.2 Gram (approx.) MOUNTING POSITION: Any Maximum Ratings Junction Temperature: – 55 to +175°C Storage Temperature: – 65 to +175°C DC Power Dissipation: 400 mW @ TA = 50°C WAFER FAB LOCA.

1N821A : • 1N821-1,1N823-1,1N825-1,1N827-1 AND 1N829-1 AVAILABLE IN JAN, JANTX, JANTXV AND JANS PER MIL-PRF-19500/159 • TEMPERATURE COMPENSATED ZENER REFERENCE DIODES • METALLURGICALLY BONDED • DOUBLE PLUG CONSTRUCTION 1N821 thru 1N829A and 1N821-1 thru 1N829-1 MAXIMUM RATINGS Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C DC Power Dissipation: 500mW @ +50°C Power Derating: 4 mW / °C above +50°C REVERSE LEAKAGE CURRENT lR = 2µA @ 25°C & VR = 3 Vdc ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified. JEDEC TYPE NUMBER ZENER VOLTAGE vz @ I ZT ZENER TEST CURRENT I ZT MAXIMUM ZENER IMPEDANCE (Note 1) Z ZT VOLTAGE TEMPERATURE STABILITY ∆V ZT -55° to +100° (N.

1N821A : 1N821 thru 1N829A Temperature Compensated Zener Diodes Features ■ Temperature compensated zener diodes ■ Metallurgically bonded ■ Double plug construction Maximum Ratings (TA = 25°C unless otherwise noted) Parameter Operating Temperature Storage Temperature DC Power Dissipation Power Derating Symbol TJ TSTG PTOT Conditions Ratings TA = 50°C TA 50°C -65 to +175 -65 to +175 500 4.0 Package: DO-35 Unit °C °C mW mW/°C Electrical Characteristics (TA=25°C unless otherwise noted) MPN Zener Voltage VZ@ IZT Zener Test Current IZT Maximum Zener Impedance (Note 1) ZZT Voltage Temperature Stability ∆VZT -55°C to +100°C (Note 2) 1N821 1N821A 1N822 † 1N823 1N823A 1N824 † 1N825 1N825A 1N826 .

1N821A : Features: D DO−7 Package 1N821A thru 1N829A Zener Diode, Temperature Compensating, 5.9V to 6.5V Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Operating Junction Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55° to +100°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55° to +100°C Forward Voltage (IF = 200mA), VF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.1V DC Power Dissipation (TA = +50), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW Deratve Abo.

1N821A : • 1N821-1,1N823-1,1N825-1,1N827-1 AND 1N829-1 AVAILABLE IN JAN, JANTX, JANTXV AND JANS PER MIL-PRF-19500/159 • TEMPERATURE COMPENSATED ZENER REFERENCE DIODES • METALLURGICALLY BONDED • DOUBLE PLUG CONSTRUCTION 1N821 thru 1N829A and 1N821-1 thru 1N829-1 MAXIMUM RATINGS Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C DC Power Dissipation: 500mW @ +50°C Power Derating: 4 mW / °C above +50°C REVERSE LEAKAGE CURRENT lR = 2µA @ 25°C & VR = 3 Vdc ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise speci½ed. JEDEC TYPE NUMBER 1N821 1N821A 1N822 † 1N823 1N823A 1N824 † 1N825 1N825A 1N826 1N827 1N827A 1N828 1N829 1N829A ZENER VOLTAGE vz @ I ZT VOLTS 5.9—6.5 5.9—6.5 5.9—.

1N821A : Temperature Compensated Zener Reference Diode Series 1N821 thru 1N829A & 1N821-1 thru 1N829-1 Features • 1N821-1, 1N823-1, 1N825-1, 1N827-1 and 1N829-1 available in JAN, JANTX, JANTXV, JANS • Metallurgically Bonded, Double Plug Construction Maximum Ratings Operating & Storage Temperature: -65°C to +175°C DC Power Dissipation: 500mW @ +50°C Power Derating: 4 mW / °C above +50°C REVERSE LEAKAGE CURRENT lR = 2 μA @ 25°C & VR = 3 Vdc Electrical Specifications @ +25 ºC (Unless Otherwise Specified) JEDEC TYPE Number (Note1) 1N821 1N821A 1N822 † 1N823 1N823A 1N824 † 1N825 1N825A 1N826 1N827 1N827A 1N828 1N829 1N829A Normal Zener Voltage Vz @ IZT Volts 5.9—6.5 5.9—6.5 5.9—6.5 5.9—6.5 5.9—6.5 5.9—.

1N821A : 1N821-1N829A High-reliability discrete products and engineering services since 1977 TEMPERATURE COMPENSATED ZENER REFERENCE DIODE FEATURES  Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.  Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS Operating and storage temperature range DC power dissipation Solder temperatures -65°C to +175°C 500mW @ TL = 25°C and maximum current lZM OF 70mA. For optimum voltage-temperature stability, lZ = 7.5mA (less than 50 mW in dissipated power) 260°C for 10 s (max) ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Part n.