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1N821

Part Number	1N821
Manufacturer	Motorola Inc
Description	TEMPERATURECOMPENSATED SILICON ZENER REFERENCE DIODES 6.2 V/ 400 mW
Published	Mar 23, 2005
Detailed Description	MOTOROLA SEMICONDUCTOR TECHNICAL DATA Temperature-Compensated Zener Reference Diodes Temperature-compensated zener ref...
Datasheet	1N821 PDF File

Overview

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Temperature-Compensated Zener Reference Diodes Temperature-compensated zener reference diodes utilizing a single chip oxide passivated junction for long-term voltage stability.
A rugged, glass-enclosed, hermetically sealed structure.
Mechanical Characteristics: CASE: Hermetically sealed, all-glass DIMENSIONS: See outline drawing.
FINISH: All external surfaces are corrosion resistant and leads are readily solderable.
POLARITY: Cathode indicated by polarity band.
WEIGHT: 0.
2 Gram (approx.
) MOUNTING POSITION: Any Maximum Ratings Junction Temperature: – 55 to +175°C Storage Temperature: – 65 to +175°C DC Power Dissipation: 400 mW @ TA = 50°C WAFER FAB LOCATION: Phoenix, Arizona ASSEMBLY/TEST LOCATION: Phoenix, Arizona 1N821,A 1N823,A 1N825,A 1N827,A 1N829,A TEMPERATURECOMPENSATED SILICON ZENER REFERENCE DIODES 6.
2 V, 400 mW CASE 299 DO-204AH GLASS ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.
VZ = 6.
2 V ± 5%* @ IZT = 7.
5 mA) (Note...

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