2SK3510

2SK351 : ·motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 800 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 5 A IDM Drain Current-Single Pluse 10 A PD Total Dissipation @TC=25℃ 125 W TJ Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX 1 UNIT ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PA.

2SK351 : OEM: Hitachi MOSFET Transistor 2SK351 / K351 Datasheet Datasheet Rev. 2.0 – 09/19 – data without warranty / liability OEM: Hitachi MOSFET Transistor 2SK351 / K351 Datasheet Datasheet Rev. 2.0 – 09/19 – data without warranty / liability OEM: Hitachi MOSFET Transistor 2SK351 / K351 Datasheet Datasheet Rev. 2.0 – 09/19 – data without warranty / liability .

2SK3511 : SMD Type MOSFET MOS Field Effect Transistor 2SK3511 TO-263 +0.1 1.27-0.1 Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Features Super low on-state resistance: RDS(on) = 12.5 m MAX. (VGS = 10 V, ID = 42 A) +0.2 8.7-0.2 Low Ciss: Ciss = 5900 pF TYP. Built-in gate protection diode +0.1 1.27-0.1 0.1max +0.1 0.81-0.1 +0.2 5.28-0.2 2.54 5.08 +0.1 -0.1 +0.2 2.54-0.2 +0.2 15.25-0.2 +0.2 2.54-0.2 +0.2 0.4-0.2 Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current Power dissipation TC=25 TA=25 Channel temperature Storage temperature * PW 10 s,Duty Cycle 1% Tch Tstg Symbol VDSS VGSS ID Idp * PD Rating 75 20 83 260 100 1.5 150 -55 to +150 Unit V V A.

2SK3511 : The 2SK3511 is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER 2SK3511 2SK3511-S PACKAGE TO-220AB TO-262 TO-263 TO-220SMD Note FEATURES • Super low on-state resistance: RDS(on) = 12.5 mΩ MAX. (VGS = 10 V, ID = 42 A) • Low Ciss: Ciss = 5900 pF TYP. • Built-in gate protection diode 2SK3511-ZJ 2SK3511-Z Note TO-220SMD package is produced only in Japan. (TO-220AB) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 VDSS VGSS ID(DC) ID(pulse) PT PT Tch Tstg 75 ±20 ±83 ±260 100 1.5 150 –55 to +150 52 250 .

2SK3512-01L : 2SK3512-01L,S,SJ FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof P4 Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Symbol Ratings Unit V V DS 500 A ID ±12 A ID(puls] ±48 V VGS ±30 A IAR *2 12 mJ EAS *1 217 kV/µs dVDS/dt *4 20 dV/dt *3 5 kV/µs PD Ta=25°C 1.67 W Tc=25°C 95 +150 Operating and storage Tch °C -55 to +150 temperature range Tstg °C DSS, Tch=150°C *3 IF =-ID, -di/dt=50A/µs, Vcc=BV *1 L=2.77mH, Vcc=50V.

2SK3512-S : 2SK3512-01L,S,SJ FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof P4 Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Symbol Ratings Unit V V DS 500 A ID ±12 A ID(puls] ±48 V VGS ±30 A IAR *2 12 mJ EAS *1 217 kV/µs dVDS/dt *4 20 dV/dt *3 5 kV/µs PD Ta=25°C 1.67 W Tc=25°C 95 +150 Operating and storage Tch °C -55 to +150 temperature range Tstg °C DSS, Tch=150°C *3 IF =-ID, -di/dt=50A/µs, Vcc=BV *1 L=2.77mH, Vcc=50V.

2SK3512-SJ : 2SK3512-01L,S,SJ FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof P4 Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Symbol Ratings Unit V V DS 500 A ID ±12 A ID(puls] ±48 V VGS ±30 A IAR *2 12 mJ EAS *1 217 kV/µs dVDS/dt *4 20 dV/dt *3 5 kV/µs PD Ta=25°C 1.67 W Tc=25°C 95 +150 Operating and storage Tch °C -55 to +150 temperature range Tstg °C DSS, Tch=150°C *3 IF =-ID, -di/dt=50A/µs, Vcc=BV *1 L=2.77mH, Vcc=50V.

2SK3513-01L : www.DataSheet4U.com 2SK3513-01L,S,SJ FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] 200303 Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof P4 Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Ratings 600 ±12 ±48 ±30 12 183 20 5 1.67 195 +150 Operating and storage -55 to +150 temperature range *1 L=2.33mH, Vcc=60V, See to Avalanche Energy Graph *2 Tch =150°C *3 IF = BVDSS, Tch = 150°C *4 VDS = -ID, -di/dt=50A/µs, Vcc = 600V Item Drain-source breakdown .

2SK3513-01S : www.DataSheet4U.com 2SK3513-01L,S,SJ FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] 200303 Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof P4 Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Ratings 600 ±12 ±48 ±30 12 183 20 5 1.67 195 +150 Operating and storage -55 to +150 temperature range *1 L=2.33mH, Vcc=60V, See to Avalanche Energy Graph *2 Tch =150°C *3 IF = BVDSS, Tch = 150°C *4 VDS = -ID, -di/dt=50A/µs, Vcc = 600V Item Drain-source breakdown .

2SK3513-01SJ : www.DataSheet4U.com 2SK3513-01L,S,SJ FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] 200303 Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof P4 Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Ratings 600 ±12 ±48 ±30 12 183 20 5 1.67 195 +150 Operating and storage -55 to +150 temperature range *1 L=2.33mH, Vcc=60V, See to Avalanche Energy Graph *2 Tch =150°C *3 IF = BVDSS, Tch = 150°C *4 VDS = -ID, -di/dt=50A/µs, Vcc = 600V Item Drain-source breakdown .

2SK3514-01 : .

2SK3515-01MR : 2SK3515-01MR Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings TO-220F Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Symbol Ratings Unit Drain-source voltage VDS 450 V Continuous drain current ID ±8 A Pulsed drain current ID(puls] ±32 A Gate-source voltage VGS ±30 V Repetitive or non-repetitive IAR *2 8A Maximum Avalanche Energy EAS *1 193 mJ Maximum Drain-Source dV/dt dVDS/dt *4 20 kV/.

2SK3516-01L : www.DataSheet4U.com 2SK3516-01L,S,SJ FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof P4 Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Symbol Ratings Unit V V DS 450 A ID ±8 A ID(puls] ±32 V VGS ±30 A IAR *2 8 mJ EAS *1 193 kV/µs dVDS/dt *4 20 dV/dt *3 5 kV/µs PD Ta=25°C 1.67 W Tc=25°C 65 +150 Operating and storage Tch °C -55 to +150 temperature range Tstg °C *1 L=5.53mH, Vcc=45V *2 Tch = BVDSS, Tch = 150°C = -I.

2SK3516-01S : www.DataSheet4U.com 2SK3516-01L,S,SJ FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof P4 Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Symbol Ratings Unit V V DS 450 A ID ±8 A ID(puls] ±32 V VGS ±30 A IAR *2 8 mJ EAS *1 193 kV/µs dVDS/dt *4 20 dV/dt *3 5 kV/µs PD Ta=25°C 1.67 W Tc=25°C 65 +150 Operating and storage Tch °C -55 to +150 temperature range Tstg °C *1 L=5.53mH, Vcc=45V *2 Tch = BVDSS, Tch = 150°C = -I.

2SK3516-01SJ : www.DataSheet4U.com 2SK3516-01L,S,SJ FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof P4 Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Symbol Ratings Unit V V DS 450 A ID ±8 A ID(puls] ±32 V VGS ±30 A IAR *2 8 mJ EAS *1 193 kV/µs dVDS/dt *4 20 dV/dt *3 5 kV/µs PD Ta=25°C 1.67 W Tc=25°C 65 +150 Operating and storage Tch °C -55 to +150 temperature range Tstg °C *1 L=5.53mH, Vcc=45V *2 Tch = BVDSS, Tch = 150°C = -I.

2SK3517-01 : 2SK3517-01 Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof FUJI POWER MOSFET200303 N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] TO-220AB Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Ratings 500 ±6 ±24 ±30 6 115 20 5 2.02 90 +150 Operating and storage -55 to +150 temperature range *1 L=5.90mH, Vcc=50V, See to Avalanche Energy Graph *2 Tch =150°C *3 IF = BVDSS, Tch = 150°C *4 VDS = -ID, -di/dt=50A/µs, Vcc = 500V Item Drain-source voltage Continuous drain current Puls.