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2SK3511

Renesas
Part Number 2SK3511
Manufacturer Renesas
Description MOSFET
Published Jul 28, 2014
Detailed Description DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3511 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3511 is N-channel...
Datasheet PDF File 2SK3511 PDF File

2SK3511
2SK3511

Overview
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3511 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3511 is N-channel MOS Field Effect Transistor designed for high current switching applications.
ORDERING INFORMATION PART NUMBER 2SK3511 2SK3511-S PACKAGE TO-220AB TO-262 TO-263 TO-220SMD Note FEATURES • Super low on-state resistance: RDS(on) = 12.
5 mΩ MAX.
(VGS = 10 V, ID = 42 A) • Low Ciss: Ciss = 5900 pF TYP.
• Built-in gate protection diode 2SK3511-ZJ 2SK3511-Z Note TO-220SMD package is produced only in Japan.
(TO-220AB) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 VDSS VGSS ID(DC) ID(pulse) PT PT Tch Tstg 75 ±20 ±83 ±260 100 1.
5 150 –55 to +150 52 250 V V A A W W °C °C A mJ (TO-262) Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy Note2 Note2 IAS EAS Notes 1.
PW ≤ 10 µs, Duty cycle ≤ 1% 2.
Starting Tch = 25°C, VDD = 35 V, RG = 25 Ω, VGS = 20 → 0 V (TO-263, TO-220SMD) THERMAL RESISTANCE Channel to Case Thermal Resistance Channel to Ambient Thermal Resistance Rth(ch-C) Rth(ch-A) 1.
25 83.
3 °C/W °C/W The information in this document is subject to change without notice.
Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country.
Please check with local NEC representative for availability and additional information.
Document No.
D15617EJ1V0DS00 (1st edition) Date Published May 2002 NS CP(K) Printed in Japan © 2001 2SK3511 ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gat...


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