N-Channel Power MOS FET
RJK0628JPE 60 V - 160 A - N Channel MOS FET High Speed Power Switching Features For Automotive application AEC-Q101 compliant Low on-resistance : RDS(on) = 2.6 m typ. Capable of 4.5 V gate drive Low input capacitance : Ciss = 5400 pF typ Outline RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1) ) 4 123 1G Absolute Maximum Ratings ...
Renesas