DatasheetsPDF.com

RJK0628JPE

Renesas
Part Number RJK0628JPE
Manufacturer Renesas
Description N-Channel Power MOS FET
Published May 14, 2016
Detailed Description RJK0628JPE 60 V - 160 A - N Channel MOS FET High Speed Power Switching Features  For Automotive application  AEC-Q101 ...
Datasheet PDF File RJK0628JPE PDF File

RJK0628JPE
RJK0628JPE


Overview
RJK0628JPE 60 V - 160 A - N Channel MOS FET High Speed Power Switching Features  For Automotive application  AEC-Q101 compliant  Low on-resistance : RDS(on) = 2.
6 m typ.
 Capable of 4.
5 V gate drive  Low input capacitance : Ciss = 5400 pF typ Outline RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1) ) 4 123 1G Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1.
PW  10 s, duty cycle  1% 2.
Tch = 25C, Rg  50  3.
Tc = 25C 4.
AEC-Q101 compliant Symbol VDSS VGSS ID ID (pulse) Note1 I Note3 DR IDR (pulse) Note1 I Note2 AP E Note2 AR Pch Note3 Tch Note4 Tstg Thermal Impedance Characteristics  Channel to case thermal impedance ch-c: 0.
781C/W Preliminary Datasheet R07DS0336EJ0200 Rev.
2.
00 Aug 29, 2012 2, 4 D 1.
Gate 2.
Drain 3.
Source 4.
Drain S 3 Value 60 +20 / –5 160 640 160 640 65 362 192 175 –55 to +150 (Ta = 25C) Unit V V A A A A A mJ W C C R07DS0336EJ0200 Rev.
2.
00 Aug 29, 2012 Page 1 of 6 RJK0628JPE Electrical Characteristics Item Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Note: 5.
Pulse test Preliminary Symbol IGSS IDSS VGS(off) RDS(on) RDS(on) Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDF trr Min — — 1.
0 — — — — — — — — — — — — — — Typ — — — 2.
6 3.
6 5400 1400 1100 120 15 35 20 45 120 60 0.
96 60 Max 10 10 2.
0 3.
2 4.
9 — — — — — — — — — — 1.
25 — Unit A A V m m pF pF pF nC nC nC ns ns ns ns V ns (Ta = 25C) Test Conditions VGS ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)