Part Number
|
RQJ0301HGDQS |
Manufacturer
|
Renesas |
Description
|
Silicon P-Channel MOS FET |
Published
|
May 14, 2016 |
Detailed Description
|
RQJ0301HGDQS
Silicon P Channel MOS FET Power Switching
Features
• Low on-resistance RDS(on) = 38 m Ω typ (VGS = –10 V, I...
|
Datasheet
|
RQJ0301HGDQS
|
Overview
RQJ0301HGDQS
Silicon P Channel MOS FET Power Switching
Features
• Low on-resistance RDS(on) = 38 m Ω typ (VGS = –10 V, ID = –2.
6 A)
• Low drive current • High speed switching • 4.
5 V gate drive
Outline
RENESAS package code: PLZZ0004CA-A (Package name: UPAK R )
1 2 3
4
Note: Marking is “HG”.
REJ03G1265-0300 Rev.
3.
00
Jun 05, 2006
2, 4 D
1.
Gate 1 G 2.
Drain
3.
Source 4.
Drain S 3
*UPAK is a trademark of Renesas Technology Corp.
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
VDSS
Gate to source voltage
VGSS
Drain current Drain peak current
ID
ID
Note1 (pulse)
Body - drain diode reverse drain current Channel dissipation Channel dissipation
IDR
Pch Note2
Pch
Note1 (...
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