Part Number | RQJ0301HGDQS |
Manufacturer | Renesas |
Description | Silicon P-Channel MOS FET |
Features | • Low on-resistance RDS(on) = 38 m Ω typ (VGS = –10 V, ID = –2.6 A) • Low drive current • High speed switching • 4.5 V g... |
Published | May 14, 2016 |
Datasheet | RQJ0301HGDQS PDF File |