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RQK2501YGDQA

Silicon N-Channel MOS FET

Description

RQK2501YGDQA Silicon N Channel MOS FET Power Switching Features • High drain to source voltage and Low gate drive VDSS : 250 V and 2.5 V gate drive • Low drive current • High speed switching • Small traditional package (MPAK) Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 1 2 Preliminary Datasheet R07DS0312EJ0400 Rev.4.00 Jan 10, 2014 3 ...


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