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RQK2501YGDQA

Part Number	RQK2501YGDQA
Manufacturer	Renesas
Description	Silicon N-Channel MOS FET
Published	May 14, 2016
Detailed Description	RQK2501YGDQA Silicon N Channel MOS FET Power Switching Features • High drain to source voltage and Low gate drive VDSS :...
Datasheet	RQK2501YGDQA PDF File

Overview

RQK2501YGDQA Silicon N Channel MOS FET Power Switching Features • High drain to source voltage and Low gate drive VDSS : 250 V and 2.
5 V gate drive • Low drive current • High speed switching • Small traditional package (MPAK) Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 1 2 Preliminary Datasheet R07DS0312EJ0400 Rev.
4.
00 Jan 10, 2014 3 D 2 G S 1 1.
Source 2.
Gate 3.
Drain Absolute Maximum Ratings Item Symbol Drain to source voltage VDSS Gate to source voltage VGSS Drain current Drain peak current ID ID(pulse) Note1 Body - drain diode reverse drain current Channel dissipation IDR Pch Note2 Channel temperature Tch Storage temperature Tstg Notes: 1.
PW ≤ 10 μs, Duty cycle ≤ 1% 2.
When using the glass epoxy board (FR-4 40 × 40 × 1 mm) Ratings 250 ±10 0.
4 1.
6 0.
4 0.
8 150 –55 to +150 (Ta = 25°C) Unit V V A A A W °C °C R07DS0312EJ0400 Rev.
4.
00 Jan 10, 2014 Page 1 of 8 RQK2501YGDQA Electrical Characteristics Item Drain to source breakdown voltage G...

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