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Part Number
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RJK0630JPE |
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Manufacturer
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Renesas |
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Description
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Silicon N-Channel MOS FET |
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Published
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May 15, 2016 |
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Detailed Description
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RJK0630JPE
Silicon N Channel MOS FET High Speed Power Switching
Features
• For Automotive application • AEC-Q101 complia...
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Datasheet
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RJK0630JPE
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Overview
RJK0630JPE
Silicon N Channel MOS FET High Speed Power Switching
Features
• For Automotive application • AEC-Q101 compliant • Low on-resistance : RDS(on) = 6.
2 mΩ typ.
• Capable of 4.
5 V gate drive • Low input capacitance : Ciss = 2100 pF typ.
Outline
RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1) )
4
123
1G
Absolute Maximum Ratings
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1.
PW ≤ 10 μs, duty cycle ≤ 1%
2.
Tch = 25°C, Rg ≥ 50 Ω 3.
Tc = 25°C 4.
AEC...
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