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RJK0630JPE

Renesas
Part Number RJK0630JPE
Manufacturer Renesas
Description Silicon N-Channel MOS FET
Published May 15, 2016
Detailed Description RJK0630JPE Silicon N Channel MOS FET High Speed Power Switching Features • For Automotive application • AEC-Q101 complia...
Datasheet PDF File RJK0630JPE PDF File

RJK0630JPE
RJK0630JPE

Overview
RJK0630JPE Silicon N Channel MOS FET High Speed Power Switching Features • For Automotive application • AEC-Q101 compliant • Low on-resistance : RDS(on) = 6.
2 mΩ typ.
• Capable of 4.
5 V gate drive • Low input capacitance : Ciss = 2100 pF typ.
Outline RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1) ) 4 123 1G Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1.
PW ≤ 10 μs, duty cycle ≤ 1% 2.
Tch = 25°C, Rg ≥ 50 Ω 3.
Tc = 25°C 4.
AEC-Q101 compliant Symbol VDSS VGSS ID ID (pulse) Note1 IDR IDR (pulse) Note1 I Note2 AP E Note2 AR Pch Note3 Tch Note4 Tstg Thermal Impedance Characteristics • Channel to case thermal impedance θch-c: 1.
76°C/W Preliminary Datasheet R07DS0340EJ0100 Rev.
1.
00 Apr 18, 2011 2, 4 D 1.
Gate 2.
Drain 3.
S...


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