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BC857S

PNP Silicon Multi-Chip Transistor

Description

Elektronische Bauelemente BC857S PNP Silicon Multi-Chip Transistor RoHS Compliant Product * Features Power dissipation PCM : 0.3 W (Tamp.= 25OC) Collector current ICM : -0.2 A Collector-base voltage V(BR)CBO : -50 V Operating & Storage junction Temperature Tj, Tstg : -55OC~ +150 CO C 1 B2 E2 .055(1.40) .047(1.20) SOT-363 .026TYP (0.65TYP) .021REF (0.52...

SeCoS

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