DatasheetsPDF.com

BC850

NXP
Part Number BC850
Manufacturer NXP
Description NPN general purpose transistors
Published Mar 23, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BC849; BC850 NPN general purpose transistors Product specific...
Datasheet PDF File BC850 PDF File

BC850
BC850

Overview
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BC849; BC850 NPN general purpose transistors Product specification Supersedes data of 1998 Aug 06 1999 Apr 08 Philips Semiconductors Product specification NPN general purpose transistors FEATURES • Low current (max.
100 mA) • Low voltage (max.
45 V).
APPLICATIONS • General purpose switching and amplification.
DESCRIPTION NPN transistor in a SOT23 plastic package.
PNP complements: BC859 and BC860.
MARKING TYPE NUMBER BC849B BC849C Note 1.
∗ = p : Made in Hong Kong.
∗ = t : Made in Malaysia.
MARKING CODE(1) 2B∗ 2C∗ TYPE NUMBER BC850B BC850C MARKING CODE(1) 2F∗ 2G∗ Top view handbook, halfpage BC849; BC850 PINNING PIN 1 2 3 base emitter collector DESCRIPTION 3 3 1 2 1 2 MAM255 Fig.
1 Simplified outline (SOT23) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL VCBO BC849 BC850 VCEO collector-emitter voltage BC849 BC850 VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1.
Transistor mounted on an FR4 printed-circuit board.
emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 open collector open base − − − − − − − −65 − −65 30 45 5 100 200 200 250 +150 150 +150 V V V mA mA mA mW °C °C °C PARAMETER collector-base voltage CONDITIONS open emitter − − 30 50 V V MIN.
MAX.
UNIT 1999 Apr 08 2 Philips Semiconductors Product specification NPN general purpose transistors THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1.
Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS Tj = 25 °C unless otherwise specified.
SYMBOL ICBO IEBO hFE PARAMETER collector cut-off current emitter cut-off current DC current gain BC849B; BC850B BC849C; BC850C DC current gain BC849B; BC850B BC849C; BC850C VCEsat VBEsat VBE Cc Ce fT F collector-emitter saturation voltage base-emitter saturation voltage base-emitter voltage collector capacitance e...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)