FPD6836P70
Low‐Noise High‐Frequency Packaged pHEMT
GENERAL DESCRIPTION
Package ‐ P70
The FPD6836P70 is a low parasitic, surface mountable packaged depletion mode pseudomorphic High Electron Mobility
Transistor (pHEMT) optimised for low‐noise, high‐frequency applications.
Key Characteristics
Applications
22dBm Output Power (P1dB) 15dB Gain at 5.
8GHz 0.
8dB Noise Figure at 5.
8GHz 32dB Output IP3 at 5.
8GHz 45% Power‐Added Efficiency at 5.
8GHz Usable Gain to 18GHz
Gain blocks and medium power stages WiMax (2GHz to 11GHz) WLAN 802.
11a (5.
8GHz) Point...