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FPD6836P70

Filtronic
Part Number FPD6836P70
Manufacturer Filtronic
Description LOW NOISE HIGH FREQUENCY PACKAGED PHEMT
Published May 23, 2016
Detailed Description FPD6836P70 LOW NOISE HIGH FREQUENCY PACKAGED PHEMT ` FEATURES: PACKAGE: • 22 dBm Output Power (P1dB) • 15 dB Power ...
Datasheet PDF File FPD6836P70 PDF File

FPD6836P70
FPD6836P70


Overview
FPD6836P70 LOW NOISE HIGH FREQUENCY PACKAGED PHEMT ` FEATURES: PACKAGE: • 22 dBm Output Power (P1dB) • 15 dB Power Gain (G1dB) at 5.
8 GHz • 0.
8 dB Noise Figure at 5.
8 GHz • 32 dBm Output IP3 at 5.
8 GHz • 45% Power-Added Efficiency at 5.
8 GHz • Useable Gain to 18 GHz Datasheet v3.
0 GENERAL DESCRIPTION: The FPD6836P70 is a low parasitic, surface mountable packaged depletion mode pseudomorphic High Electron Mobility Transistor (pHEMT) optimised for low noise, high frequency applications.
TYPICAL APPLICATIONS: • Gain blocks and medium power stages • WiMax (2-11GHz) • WLAN 802.
11a (5.
8GHz) • Point-to-Point Radio (to 18GHz) ELECTRICAL SPECIFICATIONS: PARAMETER SYMBOL Power at 1dB Gain Compression P1dB Small Signal Gain SSG Power-Added Efficiency PAE Maximum Stable Gain (S21/S12) f = 12 GHz f = 18 GHz Noise Figure Output Third-Order Intercept Point MSG NF IP3 CONDITIONS VDS = 5 V; IDS = 55mA VDS = 5 V; IDS = 55mA VDS = 5 V; IDS = 55mA POUT = P1dB VDS = 5 V; IDS = 55mA VDS = 5 V; IDS = 55mA, VDS = 5V; IDS = 55mA POUT = 10 dBm SCL MIN 14 TYP 22 16 45 MAX UNITS dBm dB % 15 12 0.
8 dB 32 dBm Saturated Drain-Source Current IDSS VDS = 1.
3 V; VGS = 0 V 90 105 135 Maximum Drain-Source Current IMAX VDS = 1.
3 V; VGS ≅ +1 V 215 Transconductance GM VDS = 1.
3 V; VGS = 0 V 140 Gate-Source Leakage Current IGSO VGS = -5 V 1 10 Pinch-Off Voltage |VP| VDS = 1.
3 V; IDS = 0.
2 mA 0.
7 1.
0 1.
3 Gate-Source Breakdown Voltage |VBDGS| IGS = 0.
36mA 12 14 Gate-Drain Breakdown Voltage |VBDGD| IGD = 0.
36 mA 14.
5 16 Thermal Resistance RθJC 275 Note: TAMBIENT = 22°C; RF specification measured at f = 5.
8 GHz using CW signal (except as noted) mA mA mS µA V V V °C/W Tel: +44 (0) 1325 301111 1 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: sales@filcs.
com Website: www.
filtronic.
com ABSOLUTE MAXIMUM RATING1: PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage ...


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