FPD6836P70
LOW NOISE HIGH FREQUENCY PACKAGED PHEMT
` FEATURES:
PACKAGE:
• 22 dBm Output Power (P1dB)
• 15 dB Power Gain (G1dB) at 5.
8 GHz
• 0.
8 dB Noise Figure at 5.
8 GHz
• 32 dBm Output IP3 at 5.
8 GHz
• 45% Power-Added Efficiency at 5.
8 GHz
• Useable Gain to 18 GHz
Datasheet v3.
0
GENERAL DESCRIPTION:
The FPD6836P70 is a low parasitic, surface mountable packaged depletion mode pseudomorphic High Electron Mobility
Transistor (pHEMT) optimised for low noise, high frequency applications.
TYPICAL APPLICATIONS:
• Gain blocks and medium power stages • WiMax (2-11GHz) • WLAN 802.
11a (5.
8GHz) • Point-to-Point Radio (to 18GHz)
ELECTRICAL SPECIFICATIONS:
PARAMETER
SYMBOL
Power at 1dB G...