Schottky Barrier Diode Silicon Epitaxial
1SS413CT
1.
Applications
• High-Speed Switching
2.
Features
(1) Low forward voltage : VF(3) = 0.
50 V (typ.
) (2) Low reverse current : IR = 0.
5 µA (max) (3) Small total capacitance : Ct = 3.
9 pF (typ.
)
3.
Packaging and Internal Circuit
1SS413CT
CST2
1: Cathode 2: Anode
4.
Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )
Characteristics
Symbol Note
Rating
Unit
Peak reverse voltage
VRM
25 V
Reverse voltage
VR 20
Peak forward current
IFM 100 mA
Average rectified current
IO 50 mA
Power dissipation
PD (Note 1)
100
mW
Non-repetitive peak forward surge current
IFSM (Note 2)
1
A
Junction temperature
Tj 125
S...