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1SS413CT

Toshiba
Part Number 1SS413CT
Manufacturer Toshiba
Description Schottky Barrier Diode
Published May 28, 2016
Detailed Description Schottky Barrier Diode Silicon Epitaxial 1SS413CT 1. Applications • High-Speed Switching 2. Features (1) Low forward vol...
Datasheet PDF File 1SS413CT PDF File

1SS413CT
1SS413CT

Overview
Schottky Barrier Diode Silicon Epitaxial 1SS413CT 1.
Applications • High-Speed Switching 2.
Features (1) Low forward voltage : VF(3) = 0.
50 V (typ.
) (2) Low reverse current : IR = 0.
5 µA (max) (3) Small total capacitance : Ct = 3.
9 pF (typ.
) 3.
Packaging and Internal Circuit 1SS413CT CST2 1: Cathode 2: Anode 4.
Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Note Rating Unit Peak reverse voltage VRM 25 V Reverse voltage VR 20 Peak forward current IFM 100 mA Average rectified current IO 50 mA Power dissipation PD (Note 1) 100 mW Non-repetitive peak forward surge current IFSM (Note 2) 1 A Junction temperature Tj 125  Storage temperature Tstg -55 to 125  Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
Note 1: Mounted on a glass epoxy circuit board of 20 mm × 20 mm, Pad dimension of 4 mm × 4 mm.
Note 2: Measured with a 10 ms pulse.
Start of commercial production 1999-02 1 2014-03-11 Rev.
1.
0 1SS413CT 5.
Electrical Characteristics (Unless otherwise specified, Ta = 25 ) Characteristics Forward voltage Forward voltage Forward voltage Reverse current Total capacitance Symbol Test Condition VF(1) VF(2) VF(3) IR Ct IF = 1 mA IF = 5 mA IF = 50 mA VR = 20 V VR = 0 V, f = 1 MHz Min Typ.
Max Unit  0.
33  V  0.
38  V  0.
50 0.
55 V   0.
5 µA  3.
9  pF 6.
Marking Fig.
6.
1 Marking 7.
Usage Considerations • Schottky barrier diodes (SBDs) have...


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