TOSHIBA Diode Silicon Epitaxial
Schottky Barrier Type
1SS417CT
1SS417CT
High Speed Switching Application
Unit: mm
CATHODE MARK 1.
0±0.
05 0.
25±0.
03 0.
25±0.
03
0.
65 0.
05±0.
03
• Small package
• Low forward voltage: VF (3) = 0.
56 V (typ.
) • Low reverse current: IR = 5 μA (max)
0.
6±0.
05
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse Voltage Reverse voltage Maximum (peak) forward current Average forward current Surge current (10ms) Power dissipation Junction temperature Storage temperature range Operating temperature range
VRM VR IFM IO IFSM P* Tj Tstg Topr
45 40 200 100 1 100 125 −55 to 125 −40 to 100
V V mA mA A mW °C °C °C
* Mounted o...