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1SS417CT

Toshiba
Part Number 1SS417CT
Manufacturer Toshiba
Description Silicon Diode
Published May 28, 2016
Detailed Description TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS417CT 1SS417CT High Speed Switching Application Unit: mm CA...
Datasheet PDF File 1SS417CT PDF File

1SS417CT
1SS417CT

Overview
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS417CT 1SS417CT High Speed Switching Application Unit: mm CATHODE MARK 1.
0±0.
05 0.
25±0.
03 0.
25±0.
03 0.
65 0.
05±0.
03 • Small package • Low forward voltage: VF (3) = 0.
56 V (typ.
) • Low reverse current: IR = 5 μA (max) 0.
6±0.
05 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse Voltage Reverse voltage Maximum (peak) forward current Average forward current Surge current (10ms) Power dissipation Junction temperature Storage temperature range Operating temperature range VRM VR IFM IO IFSM P* Tj Tstg Topr 45 40 200 100 1 100 125 −55 to 125 −40 to 100 V V mA mA A mW °C °C °C * Mounted o...


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