TOSHIBA Diode Silicon Epitaxial
Schottky Barrier Type
1SS420CT
High-Speed Switching Applications
• Low reverse current: IR = 5 μA (max)
0.
6±0.
05
1SS420CT
Unit: mm
CATHODE MARK 1.
0±0.
05 0.
25±0.
03 0.
25±0.
03
0.
65 0.
05±0.
03
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Maximum (peak) reverse voltage
Symbol VRM
Rating 35
Unit V
0.
38
+0.
02 -0.
03
0.
5±0.
03 0.
05±0.
03
Reverse voltage
VR 30 V
Maximum (peak) forward current IFM 300 mA
Average forward current Surge current (10 ms) Power dissipation
IO IFSM
P
200 1
150 *
mA A mW
Junction temperature Storage temperature range
Tj 125 °C
Tstg
−55 to 125
°C
CST2
Operating temperature range
Topr −40 to 100 °C JEDEC
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* Mount...