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1SS420CT

Toshiba
Part Number 1SS420CT
Manufacturer Toshiba
Description Silicon Diode
Published May 28, 2016
Detailed Description TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS420CT High-Speed Switching Applications • Low reverse current:...
Datasheet PDF File 1SS420CT PDF File

1SS420CT
1SS420CT

Overview
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS420CT High-Speed Switching Applications • Low reverse current: IR = 5 μA (max) 0.
6±0.
05 1SS420CT Unit: mm CATHODE MARK 1.
0±0.
05 0.
25±0.
03 0.
25±0.
03 0.
65 0.
05±0.
03 Absolute Maximum Ratings (Ta = 25°C) Characteristics Maximum (peak) reverse voltage Symbol VRM Rating 35 Unit V 0.
38 +0.
02 -0.
03 0.
5±0.
03 0.
05±0.
03 Reverse voltage VR 30 V Maximum (peak) forward current IFM 300 mA Average forward current Surge current (10 ms) Power dissipation IO IFSM P 200 1 150 * mA A mW Junction temperature Storage temperature range Tj 125 °C Tstg −55 to 125 °C CST2 Operating temperature range Topr −40 to 100 °C JEDEC ― * Mount...


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