Part Number
|
UGF18060 |
Manufacturer
|
CREE |
Description
|
Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET |
Published
|
May 28, 2016 |
Detailed Description
|
UGF18060
60W, 1.8 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET
Designed for DCS base station ap...
|
Datasheet
|
UGF18060
|
Overview
UGF18060
60W, 1.
8 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET
Designed for DCS base station applications in the frequency band 1.
805 to 1.
88 GHz.
Rated with a minimum output power of 60W.
It is ideal for CDMA, TDMA, WCDMA, GSM, and Multi-Carrier Power Amplifiers in Class AB operation.
• ALL GOLD metal system for highest reliability • Industry standard package • Suggested alternative to the MRF18060 • Internally matched for repeatable manufacturing • High gain, high efficiency and high linearity
• Application Specific Performance, 1.
88 GHz
GSM:
60 Watts
12.
5 dB
EDGE:
25 Watts
12.
5 dB
IS95 CDMA:
7.
5 Watts 12.
5 dB
CDMA2000:
TBD Watts 12.
5 dB
Package Type 44...
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