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UGF18060

CREE
Part Number UGF18060
Manufacturer CREE
Description Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET
Published May 28, 2016
Detailed Description UGF18060 60W, 1.8 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for DCS base station ap...
Datasheet PDF File UGF18060 PDF File

UGF18060
UGF18060

Overview
UGF18060 60W, 1.
8 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for DCS base station applications in the frequency band 1.
805 to 1.
88 GHz.
Rated with a minimum output power of 60W.
It is ideal for CDMA, TDMA, WCDMA, GSM, and Multi-Carrier Power Amplifiers in Class AB operation.
• ALL GOLD metal system for highest reliability • Industry standard package • Suggested alternative to the MRF18060 • Internally matched for repeatable manufacturing • High gain, high efficiency and high linearity • Application Specific Performance, 1.
88 GHz GSM: 60 Watts 12.
5 dB EDGE: 25 Watts 12.
5 dB IS95 CDMA: 7.
5 Watts 12.
5 dB CDMA2000: TBD Watts 12.
5 dB Package Type 44...


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