Part Number
|
CMZ33 |
Manufacturer
|
Toshiba Semiconductor |
Description
|
Silicon Diffused Type Zener Diode |
Published
|
May 31, 2016 |
Detailed Description
|
○ Surge absorber
CMZ12 to CMZ51
TOSHIBA Zener Diode Silicon Diffused Type
CMZ12 to CMZ51
Unit: mm
• Average power diss...
|
Datasheet
|
CMZ33
|
Overview
○ Surge absorber
CMZ12 to CMZ51
TOSHIBA Zener Diode Silicon Diffused Type
CMZ12 to CMZ51
Unit: mm
• Average power dissipation : P = 2 W
• Zener voltage
: VZ = 12 to 51 V
• Suitable for compact assembly due to small surface mount package “M−FLATTM” (Toshiba package name)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Power dissipation
Symbol Rating Unit P 2 (Note 1) W
1.
Anode 2.
Cathode
Junction temperature
Tj −40 to 150 °C
Storage temperature range Tstg −40 to 150 °C
Note 1: Ta = 30°C
Device mounted on a ceramic board
Board size
: 50 mm × 50 mm
Land Pattern size : 2 mm × 2 mm
Board thickness : 0.
64 mm
JEDEC JEITA TOSHIBA Weight: 0.
023 g (typ.
)
― ― 3-4E1S
Note 2: U...
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