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CMZ12

Toshiba Semiconductor
Part Number CMZ12
Manufacturer Toshiba Semiconductor
Description Silicon Diffused Type Zener Diode
Published May 31, 2016
Detailed Description ○ Surge absorber CMZ12 to CMZ51 TOSHIBA Zener Diode Silicon Diffused Type CMZ12 to CMZ51 Unit: mm • Average power diss...
Datasheet PDF File CMZ12 PDF File

CMZ12
CMZ12

Overview
○ Surge absorber CMZ12 to CMZ51 TOSHIBA Zener Diode Silicon Diffused Type CMZ12 to CMZ51 Unit: mm • Average power dissipation : P = 2 W • Zener voltage : VZ = 12 to 51 V • Suitable for compact assembly due to small surface mount package “M−FLATTM” (Toshiba package name) Absolute Maximum Ratings (Ta = 25°C) Characteristics Power dissipation Symbol Rating Unit P 2 (Note 1) W 1.
Anode 2.
Cathode Junction temperature Tj −40 to 150 °C Storage temperature range Tstg −40 to 150 °C Note 1: Ta = 30°C Device mounted on a ceramic board Board size : 50 mm × 50 mm Land Pattern size : 2 mm × 2 mm Board thickness : 0.
64 mm JEDEC JEITA TOSHIBA Weight: 0.
023 g (typ.
) ― ― 3-4E1S Note 2: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are w...


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