IS66WV51216ALL IS66WV51216BLL 8Mb LOW VOLTAGE, ULTRA LOW POWER PSEUDO CMOS STATIC RAM JANUARY 2010 FEATURES • High-speed access time: 55ns • CMOS low power operation – mW (typical) operating – µW (typical) CMOS standby • Single power supply – 1.
7V--1.
95V Vdd (66WV51216ALL) (70ns) – 2.
5V--3.
6V Vdd (66WV51216BLL) (55ns) • Three state outputs • Data control for upper and lower bytes • Industrial temperature available • Lead-free available FUNCTIONAL BLOCK DIAGRAM DESCRIPTION The ISSI IS66WV51216ALL/BLL is a high-speed, 8M bit static RAMs organized as 512K words by 16 bits.
It is fabricated using ISSI's high-performance CMOS technology.
This highly reliable process coup...

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)