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IS66WV51216BLL

Part Number	IS66WV51216BLL
Manufacturer	ISSI
Description	ULTRA LOW POWER PSEUDO CMOS STATIC RAM
Published	Jun 9, 2016
Detailed Description	IS66WV51216ALL IS66WV51216BLL 8Mb LOW VOLTAGE, ULTRA LOW POWER PSEUDO CMOS STATIC RAM JANUARY 2010 FEATURES • High...
Datasheet	IS66WV51216BLL PDF File

Overview

IS66WV51216ALL IS66WV51216BLL 8Mb LOW VOLTAGE, ULTRA LOW POWER PSEUDO CMOS STATIC RAM JANUARY 2010 FEATURES • High-speed access time: 55ns • CMOS low power operation – mW (typical) operating – µW (typical) CMOS standby • Single power supply – 1.
7V--1.
95V Vdd (66WV51216ALL) (70ns) – 2.
5V--3.
6V Vdd (66WV51216BLL) (55ns) • Three state outputs • Data control for upper and lower bytes • Industrial temperature available • Lead-free available FUNCTIONAL BLOCK DIAGRAM DESCRIPTION The ISSI IS66WV51216ALL/BLL is a high-speed, 8M bit static RAMs organized as 512K words by 16 bits.
It is fabricated using ISSI's high-performance CMOS technology.
This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices.
When CS1 is HIGH (deselected) or when CS2 is low (deselected) or when CS1 is low, CS2 is high and both LB and UB are HIGH, the device assumes a standby mode at which the power dissipation can be...

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IS66WV51216BLL ULTRA LOW POWER PSEUDO CMOS STATIC RAM - ISSI

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