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MT3S19

Part Number MT3S19
Manufacturer Toshiba Semiconductor
Description Silicon NPN Epitaxial Planar Type Transistor
Published Jun 14, 2016
Detailed Description TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S19 VHF-UHF Low-Noise, Low-Distortion Amplifier Applications Fea...
Datasheet MT3S19




Overview
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S19 VHF-UHF Low-Noise, Low-Distortion Amplifier Applications Features • Low-Noise Figure:NF=1.
5 dB (typ.
) (@ f=1 GHz) • High Gain:|S21e|2=12.
5 dB (typ.
) (@ f=1 GHz) MT3S19 Unit: mm Marking 3 T6 1.
Base 2.
Emitter 3.
Collector 12 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit S-Mini JEDEC TO-236 JEITA SC-59 TOSHIBA 2-3F1A Weight: 0.
012 g (typ.
) Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector-current Base-current Collector power dissipation Junction temperature Storage temperature range VCBO VCEO VEBO IC IB Pc PC(Note 1) Tj Tstg 12 6 2 80 10 180 800 150 −55 to ...






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