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MT3S05T

Part Number	MT3S05T
Manufacturer	Toshiba Semiconductor
Description	TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE
Published	Nov 9, 2006
Detailed Description	www.DataSheet4U.com MT3S05T TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S05T VHF~UHF Band Low Noise Amplif...
Datasheet	MT3S05T PDF File

Overview

www.
DataSheet4U.
com MT3S05T TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S05T VHF~UHF Band Low Noise Amplifier Applications · · · Sutable for use in an OSC Low noise figure NF = 1.
4dB Excellent collector current linearity |S21e|2 = 8.
5dB (@1 V/5 mA/1 GHz) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 10 5 2 40 10 100 125 -55~125 Unit V V V mA mA mW °C °C JEDEC JEITA TOSHIBA ― ― 2-1B1A g (typ.
) Marking 3 Weight: T 1 K 2 1 2002-01-23 www.
DataShee...

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