INCHANGE Semiconductor
isc N-Channel MOSFET
Transistor
isc Product Specification
2SK357
DESCRIPTION ·Drain Current –ID= 5A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 150V(Min) ·Fast Switching Speed
APPLICATIONS ·High speed power switching applications.
·High Drain Current.
·High forward transfer admittance ·Low leakage Current.
·Low Drain-Source on resistance
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER
VALUE UNIT
VDSS VGS ID Ptot Tj Tstg
Drain-Source Voltage (VGS=0)
150 V
Gate-Source Voltage
±20
V
Drain Current-continuous@ TC=25℃ 5 A
Total Dissipation@TC=25℃
40 W
Max.
Operating Junction Temperature
150
℃
Storage Temperature Range
-55~150 ℃
isc website：www.
iscsemi.
cn
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