Part Number
|
TMU3N40ZG |
Manufacturer
|
TRinno |
Description
|
N-channel MOSFET |
Published
|
Jun 16, 2016 |
Detailed Description
|
Features Low gate charge 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package ...
|
Datasheet
|
TMU3N40ZG
|
Overview
Features Low gate charge 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification Improved ESD performance
D-PAK
Device TMD3N40ZG/TMU3N40ZG
Package D-PAK/I-PAK
TMD3N40ZG/TMU3N40ZG
VDSS = 440 V @Tjmax ID = 2A RDS(on) = 3.
4 W(max) @ VGS= 10 V
I-PAK
D G
Marking TMD3N40ZG/TMU3N40ZG
S
Remark Halogen Free
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1)
TC = 25 ℃ TC = 100 ℃
Single Pulse Avalanche Energy (Note 2)
Repetitive Avalanche Current (Note 1)
Repetitive Avalanche Energy (Note 1) Power Dissipation
TC = 25 ℃ Derate above 25 ℃
Peak Diod...
Similar Datasheet