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TMU3N40ZG

Part Number	TMU3N40ZG
Manufacturer	TRinno
Description	N-channel MOSFET
Published	Jun 16, 2016
Detailed Description	Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package ...
Datasheet	TMU3N40ZG PDF File

Overview

Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification  Improved ESD performance D-PAK Device TMD3N40ZG/TMU3N40ZG Package D-PAK/I-PAK TMD3N40ZG/TMU3N40ZG VDSS = 440 V @Tjmax ID = 2A RDS(on) = 3.
4 W(max) @ VGS= 10 V I-PAK D G Marking TMD3N40ZG/TMU3N40ZG S Remark Halogen Free Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TC = 25 ℃ TC = 100 ℃ Single Pulse Avalanche Energy (Note 2) Repetitive Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Power Dissipation TC = 25 ℃ Derate above 25 ℃ Peak Diode Recovery dv/dt (Note 3) Operating Junction and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds * Limited only by maximum junction temperature Symbol VDS VGS ID IDM EAS IAR EAR PD dv/dt TJ, TSTG TL Thermal Characteristics Parameter Maximu...

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TMU3N40ZG N-channel MOSFET - TRinno

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